An experimental instrument is set up to observe the energy distribution of electrons (mainly secondary electrons) on the anode screen in the field emission.
我们搭建了一套实验装置，用来观察场发射中到达阳极屏上的电子(主要是二次电子)的能量分布。
The results show that no matter the range of the implanted ion itself or secondary effect sphere of secondary electrons, radical diffusion, thermal spike, cascade atoms and shock wave etc.
结果表明：无论是注入离子本身的射程，还是次级电子、自由基扩散、高温热穗、级联原子和冲击波等次级作用范围都无法触及表皮下面的胚细胞。
A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization.
一个高反向偏置电压产生一个强有力的内部电场，加速了通过硅晶格的电子，并通过碰撞电离产生二次电子。
A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization.
一个高反向偏置电压产生一个强有力的内部电场，加速了通过硅晶格的电子，并通过碰撞电离产生二次电子。
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