使用温水冲洗发片。
我洗濯头发。
He gave it to Lucie Rie (1902-95), who on her death bequeathed it to Janet Leach.
他把它给了露西惠(1902年至95年)，谁死在她的遗赠给珍妮·特利奇。
It is the intention of the LME to seek RIE authorisation for the new joint venture.
这是伦敦金属交易所有意谋求刻蚀授权的新的联合合资企业。
The trace elements content and NSF value af nutritional balanced rice and normal rie were reported.
报道了营养平衡米和普通籼米的微量元素含量和nsf值。
DOE's fabrication techniques mainly include laser beam or electron beam writing, RIE, ion milling and thin film deposition.
衍射光学元件的制作技术主要包括激光或电子束直写、反应离子刻蚀、离子束铣及薄膜沉积。
Mechanism of dry etching damage and main causes for RIE induced - damage are investigated with RIE technique by utilizing PIN photodiodes.
采用rie法，利用PIN光电二极管，研究了干法腐蚀损伤机理及引起损伤的主要因素。
Yak hairs were treated by the microwave electron cy cl otron resonance plasma reactive ion etching(ECR-RIE) equipment to improve its property of weave.
采用微波电子回旋共振等离子体反应离子刻蚀（E CR-R IE）装置对牦牛毛纤维进行表面改性，从而改善牦牛毛的可纺性。
Objective To discuss the pathogenesis, etiology, clinical manifestations, diagnosis, treatment and prognosis of right-sided infective endocarditis (RIE).
目的对右心感染性心内膜炎(rie)的发病机制、病原学、临床特点、诊断、治疗和预后等方面进行讨论。
The other is the removal of SU-8, which can be resolved by the combination of marinating in hot acetone, ultrasonic cleanout, RIE and cineration at high temperature.
对于光刻胶的去除用热丙酮泡、超声清洗、反应离子刻蚀和高温灰化法相结合，能达到较好的效果。
By optimizing DRIE parameters and RIE etching the trenches' opening, the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.
采用经过参数优化的DRIE刻蚀深硅槽，并用反应离子刻蚀(RIE)对深槽开口形状进行修正，制造了具有理想侧壁形状的深槽，利于介质的完全填充，避免产生空洞。
On basis of the complete collection of reservoir-induced earthquakes(RIE)in our country, the growing and developing process of RIE monitoring and prediction is remembered.
在较完整地收集我国水库诱发地震震例的基础上，回顾了我国水库诱发地震监测的成长进步历程。
Its result was conformed by animal NIH method. The experiments result showed that the RIE have several characteristics such as special, good reproducibility and easy to operate.
以传统的动物NIH法对电泳结果进行验证，实验结果显示该方法特异、重复性好、简便易行，与NIH法有较好的相关性。
The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactive ion etching (RIE).
利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。
The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactive ion etching (RIE).
利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。
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