We have prepared the diffusion barrier layers, pn junction and electrodes.
初步探索了阻挡层制备、扩散制结以及电极制备等相关工艺。
Leakage current theory for reverse PN junction is modified on the basis of theoretic analysis.
根据理论分析，修正了反偏pn结漏电流理论。
Semiconductor diode is a PN junction together with the corresponding client leads and package composition shell.
二极管是由一个PN结加上相应的引出端并封装管壳构成的。
The wavelength of light that is the color of light, is formed by the PN junction of the decisions of the material.
而光的波长也就是光的颜色，是由形成P-N结的材料决定 的。
The point type PN junction photodiodes of silicon are fabricated, and the photoelectric parameters of photodiode are measured.
用N型硅单晶材料制作了点状PN结光电二极管，对二极管的光电参数进行了测量。
PN-junction is the basic element of electron system and the interference of electromagnetic radiation will affect on PN junction finally.
PN结是电子系统的构成基础，电磁辐射干扰将最终作用到PN结上。
This paper introduces the PN junction sensor experimental system of temperature developed by the author according to the needs of teaching.
介绍了根据教学需要而设计开发的PN结温度传感器实验系统。
The microwave solid state noise diodes are investigated based on the PN junction avalanche multiplication theory with tunneling penetration.
本文以带有隧道穿透的PN结雪崩倍增理论，研究了微波固体噪声二极管。
Based on the relationship between the diffusion current and voltage of PN junction, the Boltzmann's constant is measured with high accuracy.
运用半导体的PN结扩散电流与电压关系特性，精确地测量了玻尔兹曼常数。
In the 1960s, the use of science and technology workers semiconductor PN junction of the principle of developing a LED Lighting -emitting diodes.
上个世纪60年代，科技工作者利用半导体p N结发光的原理，研制成了LED发光二极管。
PN junction temperature sensor is used. 16 temperature signs are acquired at the same time. Proceeded data can be indicated, printed or controlled.
系统选用PN结温度传感器，可同时测取16个温度信号，经数据处理后可实时显示、打印或控制。
In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction.
为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。
Obviously, the sustaining voltage can also be increased since the anode-short structure makes the breakdown performance of the IGBT close to a normal PN junction.
我们对这种方案进行了仔细分析，包括在设计工作条件和非设计工作条件下IGBT的性能，结果表明：该结构在两种情况下都能明显改善IGBT的关断、耐压性能。
This paper introduces the characteristics of PN junction using as TM transducer. Its working principles and application in carrier communication are also described.
本文介绍使用PN 结作为温度传感器的特点、工作原理及其在载波通信中的应用。
Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.
无论npn型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。
PN junction is the foundation of almost all the power devices. The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices.
PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。
Theoretic analysis results show that the doping concentration and junction depth are main factors for the range of spectrum response of Si color sensor with double PN junction.
通过理论分析得出硅双结型色敏器件中掺杂浓度和两个结的结深是影响光谱响应范围的主要因素。
The sensitive temperature characteristics of PN junction inverse saturation current is fully utilized to obtain good temperature coefficient and PSRR with simple circuit structure.
该技术充分利用了PN结反向饱和电流是温度敏感函数的特性，使用简单的电路结构，达到了很好的温度特性和电源抑制性能。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c -V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
This paper presents a well water temperature monitor, and its use of PN junction temperature sensor as temperature components, integrated circuits used for ICL7126 and other A / D converter.
本文介绍一种井中水温监测仪，其采用PN结温度传感器作为感温元件，用集成电路ICL7126等作A/D转换器。
This video log amplifier is based on a monolithic IC, which is fabricated using PN junction isolation bipolar process by SISC, and all peripheral devices are integrated using hybrid IC process.
该视频对数放大器是在自制单片ic基础上混合集成，单片IC采用PN结隔离双极工艺制作。
A system of measuring light power and wavelength is designed and fabricated, using Silicon Color Sensor with double PN junction as detector, single chip processor as controller and PC as processor.
设计并实现了一种用硅双结色敏器件作为探测器，单片机作为控制器，PC作为处理器和显示器的光功率、波长同步测量系统。
The invention belongs to the technical field of microelectronics, and in particular discloses a PN (positive-negative) junction and Schottky junction mixed type diode and a preparation method thereof.
本发明属于微电子技术领域，具体公开了一种PN结和肖特基结混合式二极管及其制备方法。
According to the nonlinear re-radiation characteristic of semiconductor PN node, the nonlinear node detection system for semiconductor junction targets based on second harmonic reception is designed.
根据非线性半导体p N结再辐射特性，设计了一种基于二次谐波接收的非线性节点探测系统。
According to the nonlinear re-radiation characteristic of semiconductor PN node, the nonlinear node detection system for semiconductor junction targets based on second harmonic reception is designed.
根据非线性半导体p N结再辐射特性，设计了一种基于二次谐波接收的非线性节点探测系统。
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