Plasma enhanced chemical vapor deposition (PECVD) technique is the primary method which is used to prepare hydrogenated silicon film.
等离子体化学气相沉积技术制备氢化硅薄膜工艺条件成熟稳定而成为薄膜制备的首选方法。
Plasma enhanced chemical vapor deposition (PECVD) is one of the matured and simple manipulated among the thin film deposition methods at low temperature.
等离子增强化学气相沉积(PECVD)是低温沉积硅膜的主要方法。
Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.
采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。
The optical part can be done by applying Electron Beam Lithography (EBL), Inductively Coupled Plasma (ICP) etching, and Plasma-enhanced Chemical Vapor Deposition (PECVD).
利用电子束光刻、等离子体增强化学气相沉积、感应耦合等离子体刻蚀来实现跑道型微环谐振器的制备；
SiN thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) under various power and pressure conditions.
利用等离子体增强化学气相沉积（PECVD）工艺，在不同射频功率，不同反应气压条件下制备了氮化硅薄膜。
Without doping, plasma enhanced chemical vapor deposition (PECVD) of silica films on si substrates with gas mixtures of SiH_4 and N_2O is considered.
以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
Without doping, plasma enhanced chemical vapor deposition (PECVD) of silica films on si substrates with gas mixtures of SiH_4 and N_2O is considered.
以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
应用推荐