• Portions of the oxide layer are removed to substantially planarize the trench-filled oxide layer as the first polysilicon layer.

    所述氧化部分移除,以使所述沟槽填充的氧化层作为第一多晶硅层基本平面化

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  • The aluminum surface of the oxide layer is an electrical insulator.

    表面氧化一种的绝缘体。

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  • Manganese oxide layer forming is a critical technique in producing Tantalum capacitor.

    电容器生产关键工艺

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  • The method of the present invention can greatly increase evenness of the grid oxide layer.

    采用本发明方法大幅提高栅极氧化均匀性

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  • This might damage the delicate red cuprous oxide layer we need to make to solar cell work.

    可能会损害微妙红色氧化亚铜我们需要使太阳能电池的工作。

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  • This oxide layer is what renders the stainless steel passive and non-reactive to corrosion.

    氧化物使得不锈钢表面不活泼并不具反应性从而不易于腐蚀。

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  • The silicon oxide layer is formed by reacting a first gas mixture and a second gas mixture.

    氧化第一反应气体混合物第二气体混合物。

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  • The germanium oxide layer and the metal oxide layer are converted into a first dielectric layer.

    半导体氧化金属氧化物转化一介电层。

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  • A method for forming a silicon oxide layer for use in integrated circuit fabrication is provided.

    形成集成电路制造使用氧化方法提供

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  • Anodizing is a process of thickening the natural oxide layer that forms on the surface of aluminum.

    阳极氧化一种浓缩天然氧化形成过程表面

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  • As the steel is removed from the pickling bath, a thin oxide layer forms immediately over the surface.

    中取出时,其表面就会立即形成薄薄的氧化物

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  • An oxide layer may be between the silicon nitride layer and the surface of the silicon carbide layer.

    氮化硅碳化硅表面之间可以氧化物

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  • For example, as shown in FIG. 8a, an oxide layer 810 optionally is patterned on a silicon substrate 820.

    例如如图8a所示,氧化810选择性地衬底820上形成图案

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  • As the laser fluence exceeds the threshold a mirror surface appears, otherwise, an oxide layer will be formed.

    值以上激光作用下不锈钢表面形成镜面,而阈值以下则出现氧化

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  • The introduced oxygen in the passivated procedure reacts with the catalyst surface to form the thin oxide layer.

    表面钝化过程中引入催化剂表面形成氧化

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  • The metal oxide layer acts as a protecting layer to prevent deterioration of the phosphor due to ion bombardment.

    金属氧化物起保护层的作防止离子轰击而破坏磷光体

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  • The power supply of ac TIG welding can be used to weld aluminium and magnesium which surface has a firm oxide layer.

    交流TIG焊接电源可用焊接表面致密氧化膜的金属。

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  • Objective:To investigate the effect of porcelain bake cycles on oxide layer formed on cobalt-chromium alloy surface.

    结论所有烤瓷程序结束后,应将钴合金支架进行彻底打磨、抛光。

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  • The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.

    金属氧化物可以在该沟道之间具有渐变的金属含量

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  • The surface brightness and depth are greatly decreased, the surface oxide layer formed gradually white, paint, shorten life.

    面的亮度深度大大下降,使漆渐渐发白构成氧化缩短车漆的寿数。

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  • During wear process oxide layer formed and covered the wear surface, which protected the wear surface and decrease the wear.

    磨损过程中在磨损表面覆盖氧化物对涂层起到保护磨作用。

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  • Production speed too slow, the bottom again, such as nickel oxide layer in gold slot oxidation (or gold reduction), peel tin.

    太慢底层再次氧化氧化(还原),

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  • Microhardness of the remelting coating is higher than that of spraying coating because of oxide layer and metallurgical bonding.

    由于表面氧化存在内部冶金结合的形成,硬度喷涂层高。

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  • The formation of oxide layer during tensile process at elevated temperature in air suppresses environmental embrittlement for the alloy.

    拉伸过程形成致密氧化铝薄膜能够有效地阻止氧向基体中扩散,减少环境脆性提高合金高温塑性。

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  • The polycrystalline silicon layer is formed on the oxide layer and used for serving as an upper electrode plate of the high-voltage capacitor.

    多晶硅形成氧化层上,用以作为高压电容电极板。

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  • In one embodiment, the method includes forming a germanium oxide layer over a substrate and forming a metal oxide layer over the germanium oxide layer.

    实施例中方法包含一基板上形成半导体氧化以及在半导体氧化层上形成金属氧化物层。

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  • Through a CMP process, portions of the oxide layer are removed to substantially planarize the trench-filled oxide layer as the first polysilicon layer.

    利用化学机械研磨制程,移除氧化部分区域,以使该填满沟槽的氧化物第一多晶硅大体上齐平。

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  • Manganese content, binding ability of manganese oxide layer on quartz sand and zeolite substrates and stability of MOCS and MOCZ were also investigated.

    分别从静态方面研究了氧化物铅离子吸附性能,从静态法和动态法方面综合研究了MOCS和MOCZ铜和铅离子吸附性能。

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  • The high-voltage capacitor structure comprises a two-step diffusion drain electrode structural layer, an oxide layer and a polycrystalline silicon layer.

    高压电容结构包括双重扩散结构氧化多晶硅层。

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  • The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.

    第一重要来自氧化薄膜氧化,在之下之间形成导电通道

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