MOCVD is an abbreviation form for Metal Organic Chemical Vapor Deposition, which is a method used to grow material crystal on substrate via MOCVD device.
MOCVD是金属有机物化学气相沉积技术的简称，即通过MOCVD设备，在衬底上生长材料晶体的一种方法。
Template growth of gallium nitride nanowires was demonstrated by metal organic chemical vapor deposition (MOCVD) with carbon nanotubes as templates in this paper.
通过金属有机物化学气相沉积方法在碳纳米管模板上生长氮化镓纳米线束。
Metal Organic Chemical Vapor Deposition (MOCVD) is a key technology in growing thin-films.
金属有机化学气相沉积(MOCVD)是一门制备薄膜材料的关键技术。
The device structure is optimized firstly, then the structure is grown by metal organic chemical vapor deposition (MOCVD).
首先优化设计了器件结构，并利用金属有机物化学气相淀积（MOCVD）进行了器件的外延生长。
Ir films were prepared by metal-organic chemical vapor deposition (MOCVD) method using iridium tri-acetylacetonate precursors on molybdenum substrates.
以乙酰丙酮铱为前驱体，采用金属有机化合物化学气相沉积(MOCVD)技术在钼基体上制备了铱薄膜。
Ir films were prepared by metal-organic chemical vapor deposition (MOCVD) method using iridium tri-acetylacetonate precursors on molybdenum substrates.
以乙酰丙酮铱为前驱体，采用金属有机化合物化学气相沉积(MOCVD)技术在钼基体上制备了铱薄膜。
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