A polysilicon emitter RCA microwave transistor was fabricated to fit the power application for the first time.
首次采用多晶硅发射区RCA技术制备出微波功率晶体管。
The microwave transistor laser model is very accurate for predicting frequency-dependent electrical and optical properties.
微波晶体管激光模型可以非常准确的预测频变电和光的属性。
This paper presents a new circuit model for designing a microwave transistor amplifier, and gives a general optimum programing.
提出了一种新的设计微波晶体管放大器的电路模型，给出了通用优化设计程序。
The errors caused by the phase uncertainties of embedded parameters are deleted. In addition, LRL method can be used to DE - embed the s parameters from the microwave transistor test fixture.
由于利用代数消去法，去除了嵌入参量相位不确定性引入的误差，LRL法可用于微波晶体管测试夹具的去嵌入。
The objective of this design is to a broadband microwave power transistor used in broadband solid state amplifier.
本设计的目的是建立一个用于宽带固态放大器的宽带微波功率晶体管。
Experimenting repeatedly, by our limited equipments we provided the qualified photomask for the study of 3dg460 microwave low-noise transistor.
经过反复实验，在现有设备条件下，为3dg460微波低噪声晶体管的研制提供了合格光刻版。
For a long time, a common and popular method to solve current convergence problem of microwave power transistor is using emitter ballasting resistor, such as PTC, CTR thermistor, passive devices etc.
长期以来，解决微波功率晶体管的电流集中问题的通用做法是使用发射极镇流电阻，以及PTC,CTR热敏电阻等无源器件。
RF PA almost working in large signal, so it's circuit design methods and transistor used are different from microwave small signal amplifier, these will led to RF PA design become more difficulty.
射频功率放大器总是工作在大信号状态下，它所用的放大器件和电路设计方法都不同于小信号放大器，导致了功率放大器的设计难度较大。
RF PA almost working in large signal, so it's circuit design methods and transistor used are different from microwave small signal amplifier, these will led to RF PA design become more difficulty.
射频功率放大器总是工作在大信号状态下，它所用的放大器件和电路设计方法都不同于小信号放大器，导致了功率放大器的设计难度较大。
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