A method for fabricating a 3-d monolithic memory device.
一种用于制造3 - D单片存储装置的方法。
Now let's create a memory device context and select a new bitmap.
现在，让我们创建一个内存设备上下文，然后选择一个新的位图。
FIG. 14 depicts programming pulses applied to a cycled memory device.
图14描绘施加于循环存储器装置的编程脉冲。
BIOS is typically stored in a flash memory device on the system's motherboard.
BIOS通常存储在系统主板的一个闪存设备中。
Semiconductor memory device, display device, and portable electronic apparatus.
半导体存储器件，显示器件，以及便携式电子装置。
Command data for controlling the flash memory device is input to the controller 218.
用于控制快闪存储器装置的命令数据输入到控制器218。
A comparator receives both the read data from the memory device and the search data.
比较器从存储装置接收读数据以及搜索数据。
An embedded system also contains memory device, IO and other communication interface.
同时，嵌入式系统还包括存储设备以及其他IO和通讯设备接口等。
Check Media found under Menu - Function is a way to check the memory device for errors.
检查发现，媒体在菜单-功能是一种方法来检查错误存储设备。
Embodiments relate to a nonvolatile memory device and a method for manufacturing the same.
本发明实施例涉及一种非易失性存储器件及其制造方法。
The "unified" memory device, outlined in the journal IEEE Computer, is still undergoing testing.
根据《IEEE计算机》杂志的描述，这种“统一的”存储装置，仍在测试中。
The invention further relates to method of protecting data in a non-volatile memory device.
本发明还 涉及一种对非易失性存储器器件中的数据进行保护的方法。
Provided is a resistance random access memory device and a method of fabricating, the same.
本发明涉及一种电阻型随机存取存储器及其制造方法。
The only Write operation permitted on a flash memory device is to change a bit from a one to a zero.
flash内存设备中惟一允许的Write操作是将1修改为0。
A small memory device changes, the program's functions and Jinshan drifter like similar software.
一个小型的内存修改器，这个程序实现的功能和金山游侠之类的软件类似。
The punctured data can be decoded (120, 122) when data is to be read from the memory device (100).
当将从所述存储器装置(100)读取数据时，可对所述经穿孔数据进行解码(120、122)。
In other designs, other parts of the memory device, such as the state machine, can calculate the ECC.
在其它设计中，存储器装置的其它部分(例如状态机)可计算ecc。
The semiconductor memory device includes a bit line sense amplifier connected to a pair of bit lines.
该半导体存储器件包含连接到一对位线的位线感测放大器。
The invention provides a memory cell transistor having multi-layer tunnel insulator and memory device.
本发明提供一种具有多层隧道绝缘体的存储器单元晶体管及存储器器件。
The embedded system includes one medium reading device, one memory device and one transferring module.
该嵌入式系统包括一媒体读取装置、一储存装置、一转 录模组。
The card served as a memory device, on which the text would be written in a code based on magnetized spots.
该卡用于存储设备，文本将写在其中的以磁化点为基础的代码上。
When a memory device context is created, GDI automatically selects a 1-by-1 monochrome stock bitmap for it.
当内存设备环境创建后，GDI会自动为它装载一个黑白位图。
Any read errors like a 'Not Available' alert could indicate problems in the memory device, the card reader or the driver.
任何读取错误就像一个'不可用'警惕可能表明在内存设备问题，读卡机或驱动程序。
To a micro-controller, the PDIUSBD12 appears as a memory device 8-bit data bus and 1 address bit (occupying 2 locations).
对微控制器而言，PDIUSBD12看起来就像一个带8位数据总线和一个地址位（占用两个位置）的存储器件。
Additional levels of conductive rails and memory cell diodes are formed similarly to build the 3-d monolithic memory device.
类似地形成导电轨和存储单元二极管的附加层级，从而构建3- D单片存储装置。
The present application discloses a single cell non-volatile semiconductor memory device for storing two-bits of information.
本申请公开了一种单元非易失性半导体存储器件，用于存储两位信息。
GDI output functions can be used with a memory device context only if a bitmap has been created and selected into that context.
GDI的输出函数只有当内存设备环境上有了位图画布之后，才能进行输出。
In various embodiments of the invention, a memory device includes at least one sense amplifier with an asymmetrical configuration.
在本发明的各实施例中，一种存储装置包含呈不对称配置的至少一个检测放大器。
Apps can be installed directly on an external memory device (SD card). They can also be move from internal memory to the SD card and back.
可以直接在外部的内存设备(SD卡)上安装应用，还可以将应用从内部迁移到SD卡上，反之亦然。
The memory device comprises a plurality of service routines stored at different entry addresses, each related to an interruption request.
存储器装置包含多个存储于不同项目地址的服务例程，每个服务例程关联一个中断请求。
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