• Chemical Mechanical Polishing(CMP); abrasive particle; modeling; wafer;

    机械化学抛光建模芯片

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  • Polishing pad is a very important component of the chemical-mechanical polishing (CMP) system.

    抛光化学机械抛光(CMP)系统重要组成部分

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  • Polishing pad conditioning is very important for chemical mechanical polishing to improve the performances of a pad.

    抛光修整化学机械抛光重要过程之一。

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  • The copper chemical-mechanical polishing (CMP) which is the key planarization technology for ULSI manufacturing was discussed.

    对用于甚大规模集成电路(ULSI)制造关键平坦工艺———化学机械抛光(CMP)技术进行了讨论。

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  • Embarked from the component and structure of phosphate laser glass, its chemical-mechanical polishing (CMP) mechanism is analyzed.

    磷酸盐激光玻璃成分结构出发,分析了化学机械抛光(CMP)机制

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  • A chemical mechanical polishing pad comprising a water-insoluble matrix which comprises (a) a styrene polymer and (b) a diene polymer.

    化学机械抛光包含(A)苯乙烯聚合物(B)烯聚合物构成的非水溶性基质

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  • The invention further provides methods of polishing a substrate using each of the above-described chemical-mechanical polishing compositions.

    发明进一步提供一种使用上述化学机械抛光组合物抛光基材方法

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  • Single stage re-circulation filtrations were performed to remove oversized particles from colloidal silica based Chemical-Mechanical Polishing (CMP) slurry.

    循环过滤,用来去除胶体化学机械抛光(CMP)磨料中尺寸过大微粒

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  • In Chemical-Mechanical polishing experiments we produced optical quality super smooth surfaces on single-crystal silicon, but cannot insure the surface figure.

    使用机械 -化学抛光法加工大尺寸单晶硅可获超光滑表面很难保证良好面型。

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  • The affections of different surface treatments by mechanical polishing, chemical etching and photoetching to the properties of electrodes have also been discussed.

    探讨机械抛光化学抛光和光抛光等不同表面处理方法电极特性影响

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  • Introduction to semiconductor manufacturing technology including oxidation, diffusion, alloying, re-flow process, copper process and chemical-mechanical polishing.

    半导体制程技术包括氧化扩散、热处理、合金化、再流动铜制化学机械研磨制程简介

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  • The smooth interior surface is achieved through mechanical polishing and generally followed by electropolishing, which removes the surface layer and its impurities.

    平滑表面通过取出表面层杂质的机和在次之后再电抛得到的。

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  • The invention discloses chemi-mechanical polishing liquid, which comprises a sol type silicon dioxide, a velocity accelerating auxiliary agent, a surfactant and water.

    发明公开了一种化学机械抛光含有溶胶二氧化硅速率增助表面活性剂水。

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  • In this paper mechanical polishing; Chemical polishing and hydrogen reduction methods used im cleaning bearing steel surface for oxygen determination have been studied.

    本文研究机械抛光化学抛光还原法处理轴承表面测定的影响。

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  • The invention is a combined chemical-mechanical polishing method, firstly primarily polishing a to-be-flattened layer by first polishing disc in the first polisher platform;

    一种复合式化学机械抛光是先第一抛光机台中,第一抛光盘 对待平坦进行初步的抛光。

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  • Typical chemical mechanical polishing (CMP) of copper layers on semiconductor devices involves using a hard pad in the first step and a soft pad for the barrier layer removal step.

    半导体器件化学机械抛光(CMP)一道工序一般需要使用抛光磨去阻挡工序中要用到垫。

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  • We have to face some Cu line issues after we use Cu to replace AL, such as the reliability with Cu and low K dielectric, and post-CMP (Chemical Mechanical Polishing) Cu line voids defect.

    引入电镀工艺的同时我们不得不面对一些铜线工艺所特有的缺陷铜线K值介电质可靠性问题以及电镀铜后产生的孔洞缺陷等问题。

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  • A complete bright silver plating process for deluxe tableware including chemical polishing, mechanical polishing, degreasing, cleaning, nickle plating, silver plating and post-treatment is suggested.

    介绍餐具光亮全套实用工艺包括化学抛光机械抛光、蜡、除油、镀、镀银、以及后处理等。

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  • Chemical-Mechanical % polish (CMP) - a process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.

    化学-机械抛光(CMP) -平整抛光圆片工艺采用化学移除和机械抛光两种方式。此工艺前道工艺使用

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  • Chemical-Mechanical polish (CMP) - a process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.

    化学-机械抛光(CMP) -平整抛光圆片工艺采用化学移除和机械抛光两种方式。此工艺前道工艺使用

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  • The mechanism of W-CMP was analyzed, the slurry makes a dual function of chemical erosion and mechanical lapping, has an important influence on the polishing rate.

    分析了W -CMP机理抛光W材料表面具有化学腐蚀机械研磨双重作用抛光速率有着重要影响

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  • Remove the rust parts, grease, graphite, smeary, fingerprints, mechanical scraps, polishing wax, dust, attachments rosin, flux, etc.

    清除零件油脂石墨油污指纹机械切屑抛光灰尘松香助焊剂附着物

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  • The mechanical mending and grinding of carbide die generally pass 4 procedures of kibbling, fining grinding, extract grinding and polishing.

    硬质合金机械一般经过磨、磨、磨、抛光4道工序

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  • The most common finishing operations are mechanical, such as milling, grinding, or polishing with abrasives.

    普通精加工工序用机械的方法,研磨磨削磨料

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  • Is engaged in the development, production polishing, rust mechanical one of the major manufacturers.

    海洋抛光机械有限公司国内从事开发生产抛光、除锈机械主要厂家之一

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  • Mechanical device, but also selects the international authority of the United States MBW polishing machine and sand machine, erase and so more than one.

    机械设备上,更是选用国际权威美国mbw磨光打砂机、平机台。

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  • The thermal or mechanical damage to diamond occurs possibly during the various stages of cutting and polishing.

    金刚石在过程中可能会出现机械损伤化学损伤。

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  • In the process of wafer polishing, the wafer surface could be damaged badly and fragment rate will increase sharply, because of the accumulation of stress and the mechanical action.

    硅片研磨过程中,由于应力积累剧烈机械作用,硅片表面损伤严重碎片增加

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  • In this paper two contents are studied: the data library of mold standard parts, dynamic simulation of the punching process and the mold's mechanical-electrolytic polishing.

    本文进行模具标准件数据库冲压过程动态仿真模具机械电解复合抛光技术方面内容研究。

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  • A 5-dof polishing manipulator is designed and its mechanical structure is introduced.

    设计一种5自由度抛光机械手介绍了主要结构

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