The DFT calculations show that the interstitially doped fluorine impurities induce the formation of localized states in the band gap.
DFT计算结果表明了间隙掺杂的F在带隙中诱导形成定域态。
The DFT calculations show that the interstitially doped fluorine impurities induce the formation of localized states in the band gap.
DFT计算结果表明了间隙掺杂的F在带隙中诱导形成定域态。
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