A gate electrode may surround at least a portion of the fin of the semiconductor substrate. The gate electrode may be insulated from the semiconductor substrate.
栅极电极完全围绕所述半导体衬底的所述鳍的至少一部分并与所述半导体衬底绝缘。
A gate electrode may surround at least a portion of the fin of the semiconductor substrate. The gate electrode may be insulated from the semiconductor substrate.
栅极电极完全围绕所述半导体衬底的所述鳍的至少一部分并与所述半导体衬底绝缘。
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