At the 2010 IEEE International Electron Devices Meeting in San Francisco next week, Samsung will present a paper on a rival technology: ''gate-last high-k/metal gate devices.''
不过， 令人 感到意外的是，在下周即将召开的2010年IEEE国际电子设备大会上，三星准备演讲的文章题目竟然是《gate-last工艺high-k金属栅设备》。
In this dissertation, we will investigate the application of several high-k dielectric and metal gate process technologies.
在本论文中，吾人将探讨数种高介电系数介电层与金属闸极的研究与应用。
The technology will be based on a planar process with enhanced high-K metal gate (HKMG), novel strained silicon, and low-resistance copper ultra-low-K interconnects.
该技术将基于一个具有增强的高- k金属闸（HKMG平面工艺），新型应变硅，低电阻铜超低K互连。
The technology will be based on a planar process with enhanced high-K metal gate (HKMG), novel strained silicon, and low-resistance copper ultra-low-K interconnects.
该技术将基于一个具有增强的高- k金属闸（HKMG平面工艺），新型应变硅，低电阻铜超低K互连。
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