A hetero-structure field effect transistor (HFET), may include a first layer (3) made from a first semiconductor material and a second layer (4) made from a second semiconductor material.
一种异质结构场效应晶体管(HFET)，可以包括由第一半导体材料制成的第一层(3)和由第二半导体材料制成的第二层(4)。
A hetero-structure field effect transistor (HFET), may include a first layer (3) made from a first semiconductor material and a second layer (4) made from a second semiconductor material.
一种异质结构场效应晶体管(HFET)，可以包括由第一半导体材料制成的第一层(3)和由第二半导体材料制成的第二层(4)。
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