Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。
The H-bonding attraction usage expands the scope of the assembly technique because it is possible to fabricate the ultrathin films in organic solvents.
这种基于氢键的自组装使得许多不溶于水的高分子能够在有机溶剂中形成超薄膜，拓宽了自组装超薄膜制备的研究领域。
Recently, amorphous hydrogenated carb6n (a-C: h) thin films are the focus of the research workers' attention because of their unique properties.
无定形氢化碳(a - C∶H)薄膜由于具有许多独特的性质，近年米受到研究工作者们的嘱目。
In solid films, it was concluded that they congregated to H-type congeries with left-handed helix.
通过分析，聚集采取的是左手螺旋的H-聚集形式存在。
In solid films, it was concluded that they congregated to H-type congeries with left-handed helix.
通过分析，聚集采取的是左手螺旋的H-聚集形式存在。
应用推荐