The cause of the DC bias of the main transformer in the full bridge inverter has been analyzed.
分析了全桥逆变器功率变压器产生直流偏磁的机理；
By employing the circuit topology of full-bridge inverter, the IGBT and the amorphous transformer, the power circuit could be built.
在功率电路拓扑的设计上，采用全桥逆变结构，并使用IGBT和非晶态变压器作为主要器件。
Full bridge topology was used in the main circuit, IGBT was used as power switching device, and micro-crystal core was used in mid-frequency transformer.
其主电路采用全桥式拓扑结构，以IGBT管为功率开关器件，中频变压器使用微晶磁心。
Full bridge topology was used in the main circuit, IGBT was used as power switching device, and micro-crystal core was used in mid-frequency transformer.
其主电路采用全桥式拓扑结构，以IGBT管为功率开关器件，中频变压器使用微晶磁心。
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