Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.
采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。
In this paper, the probability for adjusting silicon fast recovery diode soft factors and softness by selecting proper recombination center in process is analyzed.
探讨了快恢复二极管制造过程中，选择适当的复合中心能级去调整快恢复二极管软度因子和软度的可行性。
Based on step recovery diode, a pulse fast edge shaping circuit is realized.
阐述了一种基于阶跃恢复二极管的脉冲快速沿整形电路设计。
The experiment results show that this kind of diode have fast reverse recovery time, large reverse softness and low reverse leakage.
测试结果表明，此类快恢复二极管具有反向恢复时间短、软度大、反向漏电低的优良特性，在国际上处于领先水平。
A new definition of reverse recovery softness K of fast diodes is given, and the relationship of reverse over voltage to the softness K of the fast diode is derived and verified by experiment.
给出了快速二极管软度K的新定义；推导出快速二极管反向过电压与软度K的关系，经试验证实了软度K与反向过电压的对应关系。
It is very important that the diode be fast recovery and not a standard rectifier.
这是非常重要的，二极管，快速恢复，而不是一个标准的整流器。
It is very important that the diode be fast recovery and not a standard rectifier.
这是非常重要的，二极管，快速恢复，而不是一个标准的整流器。
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