Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE.
通过使用HVPE的外延横向过生长实现连续的化合物半导体厚膜(15)或晶片的进一步的生长。
The characteristics and processing methods of ELO (Epitaxial Lateral Overgrowth), one of SOI technologies, have been described.
本文论述了SOI方法之一——ELO（外延横向覆盖生长）技术的特点和工艺方案。
The characteristics and processing methods of ELO (Epitaxial Lateral Overgrowth), one of SOI technologies, have been described.
本文论述了SOI方法之一——ELO（外延横向覆盖生长）技术的特点和工艺方案。
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