Optimizing dopant diffusion processes.
如何优化掺杂扩散制程。
The silicon carbon layer is exposed to a dopant.
将硅碳层暴露给掺杂物。
Uses: As an activator of phosphor and dopant of garnet.
用途：用于荧光粉的活化剂和柘榴石的添加剂。
The implanted dopant has a first dopant profile in the silicon layer.
所注入的掺杂剂在硅层中具有第一掺杂剂分布。
The dopant blocking superlattice may include a plurality of stacked groups of layers.
该掺杂剂阻挡超晶格可以包括多个层叠的层组。
The results showed: the sintering was improved because of the presence of the dopant .
结果表明：由于掺杂组分的存在，烧结情况得到了明显的改进。
The nano-dopant obtained by water-based sol-gel method was well dispersive and active.
通过水基溶胶-凝胶法合成了粉体颗粒均匀、高分散性、高活性的纳米掺杂剂。
The spread uniformity of the dopant in the film surface will vary with the doping time.
又掺杂剂在膜表面分布均匀程度与掺杂时间有关。
In Part I, we want to clarify the possible mechanism that active the dopant at low temperature.
第一部分，我们想研究低温活化的可能机制。
The formation of oxygen precipitates not only had relation to point defects, but also the dopant atoms.
氧沉淀的形成与硅片中点缺陷、掺杂原子有密切关系。
These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.
这些n型搀杂浓度能使用中子嬗变搀杂(ntd)技术来取得。
With the increasing of dopant content, grains grew up uniformly, and dielectric constant and loss increased.
随着氧化硼含量的增加，晶粒尺寸均匀长大、介电常数和介电损耗都增加；
The dopant is an electron acceptor and the cage is a donor which is different from the case of metallofullerenes.
在这种包合物中有机小分子是电子的受体，而碳笼则为电子的给体，这与金属富勒烯包合物恰恰相反。
The alternating-doping profile region may include alternating regions of high and low concentrations of a dopant.
交替掺杂形态区域包含高低掺杂浓度的交替区域。
Some results of the experiment and analysis on the behaviour of diamond and dopant at high pressure were reported.
报导了高压下金刚石和掺质物行为的若干实验和分析结果。
Dopant tAn element that contributes an electron or a hole to the conduction process, thus altering the conductivity.
搀杂剂-可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。
Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in Fig. 9.
砷化三氢的反应是典型的掺杂化学反应，图9显示了该反应的淀积过程。
Cyclic voltammetry experiment shows the titanium dopant obviously improves the reversibility of charge-discharge reaction.
循环伏安实验表明，掺钛明显改善充放电反应的可逆性。
Dopant influence some properties of polyaniline such as configuration, heat stability, infrared emittance, microwave absorbing.
掺杂剂性质影响聚苯胺的结构、热稳定性、红外发射率、微波吸收等性能。
The method also includes performing a second implant process to implant additional dopant of the second type in the silicon layer.
该方法也包括执行第二注入工艺以便在硅层中注入附加的第二类型掺杂剂。
After introducing dopant and defect into the graphene, the interaction between graphene and small molecules could be strengthened.
当在石墨烯表面引入掺杂剂和缺陷后，其与气体分子之间的相互作用被明显地增强。
Results showed that the basic physical properties and microstructure of recrystallized graphite with dopant zirconium was improved.
结果表明，掺杂锆使再结晶石墨的基本物理性能及其微晶结构有较大幅度的改善。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon.
而最新的晶体管体积很小，掺杂沟道时只需在硅中置入少量掺杂原子。
Heavily doped zinc GaSb alloy was used as dopant to reduce the zinc volatile loss and control the concentrations of zinc more easily.
采用重掺锌母合金作掺杂剂，可减少锌的损失，较好地控制掺杂浓度。
In reducing atmosphere, part V5 + can go into the lattice of barium titanate and act as an acceptor dopant by neutralizing free electron.
在还原气氛烧成的条件下，部分V 5 +可以进入钛酸钡晶格，起到受主掺杂的功效。
Electron probe microanalyses and Hall effect were used to measure the variations of Ge dopant and its related donor and acceptor concentrations.
通过电子探针微区分析和霍尔效应法探测锗杂质及其相关施主和受主浓度的变化。
The effects of the content of the dopant, moulding pressure and temperature and the content of oxidant on the conductivity of PANI were studied.
研究了掺杂剂用量、模压压力、模压温度、氧化剂用量对聚苯胺盐电导率的影响。
The quantitative relations of the energy and charge transfer between substrate molecular and dopant in doped organic thin films were investigated.
研究了掺杂有机薄膜发光中基质分子与掺杂分子间能量传递和电荷转移的定量关系。
Therefore the dopant concentration profile measured by this method is a better approximation for practical carrier profile in silicon epitaxial layers.
因此，用此法测量的外延层分布是实际载流子分布的一种较好的近似。
Therefore the dopant concentration profile measured by this method is a better approximation for practical carrier profile in silicon epitaxial layers.
因此，用此法测量的外延层分布是实际载流子分布的一种较好的近似。
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