The company mainly engaged in: light-emitting diode chip, transistor, IC, NICHICON Tantalum capacitor, WALSIN capacitors, resistors, such as paste chip components.
公司主要经营：发光贴片二极管、三极管，IC,nichicon钽电容，WALSIN电容，电阻等贴片元件。
Understing basic characteristics of transistor, resistor, capacitor diode.
具备基本的晶体管、电阻器、电容器和二极管知识。
The diode ACTS like a variable resistance, low when the charging current to the capacitor is high, then increasing in value as the current decreases with time.
该二极管象一个可变的电阻。当电容器的充电电流很大时，其阻值很低；而电流随时间变小时，其阻值增大。
Parameters of main power devices which include diode, IGBT, capacitor, inductance and buffer snubber circuit have been calculated in main circuit in the article.
本文还对主电路主要功率器件进行了参数计算，包括二极管、IGBT、电容、电感、缓冲吸收电路参数等。
The series resistor can be much smaller since it is only needed to prevent overload of the voltage source and damage to the diode if the capacitor becomes short-circuited.
这时串联的电阻器可以小得多，因为其作用只是防止电压源过载以及电容器短路时损坏二极管。
At present, cascaded multicell converter, diode clamped multilevel converter and flying capacitor multilevel converter are 3 mainly converting topologies.
目前，多电平变频器的主要结构形式可分为二极管嵌位型，电容嵌位型和单元级联型三种。
Dynatron, light-emitting diode, electrolytic capacitor metalized capacitor, inductance , safety capacitor , crystal oscillator , and other kind of electronic components tape.
三极管，发光二极管，电解电容，电感，安规电容，晶振等导针式电子元器件立式编带。
The conclusion was obtained as below:for triode, diode, thyristor and capacitor, voltage derating was an effective measure to reduce the failure rates;
讨论可以得出：对于三极管、二极管、晶闸管、电容而言，电压降额是降低器件失效率的有效手段；
Nowadays, there are three prominent multilevel topologies, diode-clamped multilevel inverter, capacitor-clamped multilevel inverter and cascaded multilevel inverter.
目前常见的多电平逆变器主要有三种：二极管箝位式、电容箝位式和级联式。
The boost converter stage in turn comprises an input choke (10), a boost diode (16) and a bulk capacitor (17).
而该跟踪升压变换器级又包括输入扼流圈(10)、升压二极管(16)和大电容器(17)。
When the components, such as resistor, capacitor, inductor, diode and transistor are used in the high-frequency circuits, they have their own high-frequency equivalent models.
为了进一步分析实验中具体电路的实际情况，首先要建立分立元器件的高频等效模型。
It is usually implemented with a resistor or current source, a capacitor, and a "threshold" device such as a neon lamp, diac unijunction transistor, or Gunn diode.
通常由一个电阻器或者电流源，电容器和一个“阀门”装置，如氖灯、两端交流开关、单结晶体管或者耿式效应二极管来实现。
It is usually implemented with a resistor or current source, a capacitor, and a "threshold" device such as a neon lamp, diac unijunction transistor, or Gunn diode.
通常由一个电阻器或者电流源，电容器和一个“阀门”装置，如氖灯、两端交流开关、单结晶体管或者耿式效应二极管来实现。
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