• A second dielectric layer covers the address electrodes.

    第二介电覆盖址电极。

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  • An interface layer is formed on the gate dielectric layer.

    在栅极电介质形成界面层。

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  • The intermediate member includes at least one dielectric layer.

    中间元件包括至少一个介电

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  • A first dielectric layer covers the pairs of sustain electrodes.

    一介电覆盖成对维持电极

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  • A dielectric layer (18) is formed overlying the sacrificial layer.

    形成牺牲上面的电介质层(18)。

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  • Form the protecting layer to avoid the damage of dielectric layer.

    是为防止电介质损伤形成电介质保护层步骤。

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  • The fuse element (2) is formed over the second dielectric layer (4).

    元件(2)在第二介质(4)形成

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  • The solder mask is configured on the dielectric layer and covers the circuit layer.

    罩层配置介电覆盖线路层。

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  • The secondary electron emission from the dielectric layer makes the discharge current increase.

    绝缘介质二次电子发射使放电电流增大。

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  • The germanium oxide layer and the metal oxide layer are converted into a first dielectric layer.

    半导体氧化金属氧化物转化一介电层。

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  • In an embodiment, the method includes forming a gate dielectric layer on a semiconductor substrate.

    实施中,方法包括半导体衬底上形成栅极电介质

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  • The circuit layer is contacted with the dielectric layer and is provided at least one gasket joint.

    线路接触介电层,且线路层具有至少接垫。

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  • The protection plate (10) is formed within the first dielectric layer (14) using a damascene process.

    保护(10)利用镶嵌工艺第一介质(14)中形成

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  • Therefore any electrolytic capacitors within the product will still have a near perfect dielectric layer.

    因此产品里所包含电解电容一个接近完美状态电介质层。

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  • The capacitance of the sensor is depended on the thickness and dielectric behavior of its dielectric layer.

    电容传感器基于平板电容模型的一种新型传感器,电容值取决于介电厚度介电常数。

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  • The second dielectric layer (4) is formed over the protection plate (10) and the first dielectric layer (14).

    第二4)在保护10第一介质层(14形成

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  • A wiring and interlayer dielectric layer may be formed over the first substrate including the readout circuit.

    包括读出电路第一衬底上方形成布线层间介电

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  • The dielectric layer electrically insulates the sensor from the combustor surface, which is typically grounded.

    电介质传感器燃烧表面绝缘,表面一般接地。

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  • The protection plate (10) is adapted to shield the first dielectric layer (14) from energy from the laser beam (52).

    保护(10)适于保护第一介质(14)不受来自激光束(52)能量

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  • The dielectric layer only covers the peripheral surface of the conductive bump or the partial surface of the substrate.

    介电导电周围表面更包覆于基材部分表面上。

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  • The lower conductive plug is in contact with a phase change material pattern disposed on the lower interlayer dielectric layer.

    导电与设置于下层间介电层相变材料图案接触

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  • And the conclusion is presented too. It is easy to design and manufacture waveguide filter using dielectric layer PBG structures.

    利用介质pbg结构制作波导滤波器具有设计简单、易于实现显著优点。

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  • A first interlayer conductive joint hole is formed on and through an interlayer dielectric layer and a dielectric etch stop layer.

    第一导电形成穿过层间介电以及一介蚀刻停止层。

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  • The circuit board comprises a dielectric layer, a circuit layer and at least one electricity-conducting joint pole and a solder mask.

    一种电路板其包括介电线路层、至少导电接合罩层

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  • The dielectric constant of the second dielectric layer (4) is greater than the dielectric constant of the first dielectric layer (14).

    第 二介质4介电常数大于第一介质层(14)的介电常数。

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  • The structure (1) comprises a fuse element (2), a protection plate (10), a first dielectric layer (14), and a second dielectric layer (4).

    结构(1)包括熔丝元件(2)、保护(10)、第一介质(14),以及第二介质层(4)。

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  • A first dielectric layer covers the common electrodes and the scanning electrodes, and it includes groove shaped field concentration units.

    一介电覆盖公共电极扫描电极,并且包括凹槽形状集中单元

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  • The gate dielectric layer is deposited using a plasma enhanced deposition with a gas mixture comprising a silicon and chlorine containing compound.

    电介质沉积层使用气体包括一个芯片化合物的混合物等离子增强沉积

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  • A second interlayer conductive joint hole is formed on and through the interlayer dielectric layer and is contacted with the second plate electrode.

    该第二层导电形成穿过层间介电,且第二平板电极接触。

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  • A lateral opening (34) is formed by removing a portion of the dielectric layer and the sacrificial layer which is located between two columns of metallic catalysts.

    通过去除电介质一部分位于金属催化剂两个柱体之间牺牲形成横向开口(34)。

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