The field effect transistor includes: a silicon body, a perimeter of the silicon body abutting a dielectric isolation;
所述场效应晶体管包括：硅体，所述硅体的周边邻接介质绝缘物；
Combining the two processes, a compatible technology of SOI full dielectric isolation and complementary bipolar process is experimented. Vertical pup and npn transisto…
从实验的角度提出了一种SOI材料全介质隔离与高频互补双极工艺兼容的工艺途径。
It has been designed and constructed with the Intersil High Frequency Bipolar Dielectric Isolation process and features dynamic parameters never before available from a truly differential device.
这已被设计与Intersil的高频双极电介质隔离工艺构造和特点，从一个以前从未真正差速器可用的动态参数。
It has been designed and constructed with the Intersil High Frequency Bipolar Dielectric Isolation process and features dynamic parameters never before available from a truly differential device.
这已被设计与Intersil的高频双极电介质隔离工艺构造和特点，从一个以前从未真正差速器可用的动态参数。
应用推荐