The best polishing can be obtained while the depth of particles indented into wafer surface was equal to or near to the thickness of soft layer.
提出当磨料嵌入晶片表面的最大深度等于或接近于软质层厚度时，在理论上应具有最佳的抛光效果。
The best polishing can be obtained while the depth of particles indented into wafer surface was equal to or near to the thickness of soft layer.
提出当磨料嵌入晶片表面的最大深度等于或接近于软质层厚度时，在理论上应具有最佳的抛光效果。
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