The design of a DC sputtering power source was presented.
介绍一种大功率直流溅射恒流电源的设计。
This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.
本工作表明使用贫氧靶材直流溅射制备的高阻透明氧化锌薄膜可以应用于薄膜太阳能电池并有效地降低其成本。
Through the technology of RF and DC reactive sputtering manufacture, H2S gas sensors have been developed on silicon substrate on which a heater made of Pt were attached.
通过交流和直流反应溅射，我们以硅基片（表面上有白金加热电极）为基底制作H_2S气敏元件。
High quality nickel films have been successfully plated on cenosphere particles by dc magnetron sputtering at mom temperature.
本文论述了在空心微珠表面磁控溅射镀金属薄膜的方法。
ZnO: Al thin films were prepared on slide glass substrates by non-reactive DC magnetron sputtering at room temperature.
采用直流磁控溅射工艺，室温下在载玻片上制备了氧化锌铝透明导电薄膜。
TiOx thin films at the conditions of different depositing temperatures were on prepared on glass substrates by DC reactive magnetron sputtering.
通过磁控反应溅射，在玻璃基底上制备了不同溅射温度下的氧化钛薄膜。
The target-substrate distance, the DC power and the sputtering pressure are very important factors for coercivity, on the other hand, the effect of sputtering time is not obvious.
并发现了靶基距、功率和溅射气压对薄膜矫顽力的影响较大，其中靶基距是薄膜矫顽力最主要的控制因素。 而溅射时间在所取的水平上对薄膜矫顽力的影响最小。
The rich rare earth transition metal amorphous films were prepared by DC double target co sputtering method.
用直流共溅射方法制备了富稀土-过渡族金属非晶态合金薄膜。
Mercury used as a cathode sputtering inhibitor in DC plasma displays with a content up to 30 mg per display until 1 July 2010.
毫克每显示的直流等离子显示器中阴极溅射抑制剂中的汞含量。
In this paper, WO3 thin film was deposited on glass substrate and silicon slice by DC reactive magnetron sputtering and using metal tungsten as target.
本文采用直流反应磁控溅射工艺，以金属钨为靶材，在玻璃和单晶硅片上沉积了WO 3薄膜。
The effect on the electrical and optical properties is studied as ITO transparent conductive thin films prepared by DC magnetron reactive sputtering technique with different deposition parameters.
论述了高温直流磁控反应溅射法制备ito透明导电薄膜时氧分压、溅射气压和溅射电流等参数对其光电特性的影响。
A novel kinetics model for dc reactive sputtering was proposed.
提出了一个新的直流反应溅动力学模型。
The back ohmic contact resistance of Al-BSF by DC magnetron sputtering is downtrend with the annealing temperature increasing, and less than that by the screen printing process.
溅射工艺制备出的铝背场接触电阻随退火温度升高呈下降趋势且溅射工艺的接触电阻比印刷工艺更小。
Aluminum-doped zinc oxide (ZAO) ceramic targets for sputtering were fabricated by hot isostatic pressing (HIP) and ZAO transparent conducting thin films were prepared by dc magnetron sputtering.
用热等静压法烧结制备了高导电性ZAO（铝掺杂氧化锌）陶瓷靶材，并用直流磁控溅射法制备出ZAO透明导电薄膜。
Ultrathin aluminum films were prepared by DC reactive magnetron sputtering. The target was made by 99.999% pure aluminum.
采用直流磁控溅射法溅射纯度为99.999%的铝靶制备了超薄铝膜。
The experimental condition of DC magnetron sputtering for ZMO films with good optical and electric properties has been established.
获得了直流磁控溅射法制备具有良好光电特性的ZMO薄膜的最佳工艺条件；
The experimental condition of DC magnetron sputtering for ZMO films with good optical and electric properties has been established.
获得了直流磁控溅射法制备具有良好光电特性的ZMO薄膜的最佳工艺条件；
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