• The potassium lithium niobate (KLN) crystal has been grown by Czochralski method;

    提拉生长铌酸KLN晶体

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  • This paper reported a new procedure for growth of 5 inch diameter LT crystal in Ir-crucible by using Czochralski method.

    本文着重介绍了铱坩埚提拉法生长5英寸酸锂( LT)晶体工艺过程,该工艺使用超大尺寸坩埚生长LT晶体;

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  • Silicon single crystals are produced mainly by Czochralski method (CZ) and magnetic field app-lied Czochralski method (MCZ).

    多晶硅直拉(CZ)磁场直拉法(mcz)拉制成单晶硅棒。

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  • Compared with Czochralski method SGG single crystal growth with crucible capsuled vertical Bridgman method can improve crystal production and lower the cost efficiently.

    提拉相比,采用坩埚密封的下降生长sgg单晶可以显著提高晶体率,降低成本。

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  • The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.

    高频光电导衰减法(PCD)研究氧化钝化直拉少子寿命影响

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  • In the Czochralski crystal growth process, the main method is regulating the pulling speed and heater temperature to track the target curves, in order to achieve the diameter growth of crystal.

    直拉法晶体生长过程中主要通过调节提拉速度加热器温度跟踪目标曲线实现晶体等径生长

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  • In the Czochralski crystal growth process, the main method is regulating the pulling speed and heater temperature to track the target curves, in order to achieve the diameter growth of crystal.

    直拉法晶体生长过程中主要通过调节提拉速度加热器温度跟踪目标曲线实现晶体等径生长

    youdao

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