The invention provides a method for manufacturing CVD silicon oxide capable of improving forming quality.
本发明提供了一种可提高成形质量的CVD氧化硅制造方法。
The main contents of my graduate thesis, focusing on the synthesis of oxide and nitride semiconductor nanostructures through CVD, are summarized as:1.
基于以上原因，本论文的工作将主要建立在使用化学气相沉积法制备氮化物和氧化物半导体纳米材料的基础上。
The silicon oxide films on aluminum alloys matrix were prepared by chemical vapor deposition (CVD) in ambient pressure.
采用常压CVD方法在铝合金基底上制备出硅氧化合物陶瓷膜层。
Silicon nano-wires (SiNWs) were fabricated on Anodized Aluminum Oxide (AAO) template and silicon chips by the Chemical vapor Deposition (CVD) and thermal evaporation method.
本课题利用化学气相沉积(CVD)和热蒸发法在硅片称底和多孔氧化铝(aao)模板上制备纳米硅线。
Silicon nano-wires (SiNWs) were fabricated on Anodized Aluminum Oxide (AAO) template and silicon chips by the Chemical vapor Deposition (CVD) and thermal evaporation method.
本课题利用化学气相沉积(CVD)和热蒸发法在硅片称底和多孔氧化铝(aao)模板上制备纳米硅线。
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