Planar spiral inductor is the most important passive component of CMOS RF integrated circuit design.
平面螺旋电感是射频电路设计中最重要的无源元件。
This paper presented the various technologies in RF design and explored the feasibility and difficulties of deep sub micron CMOS RF design. And problems associated are also discussed.
本文介绍了当今RF设计的主流工艺，并分别对基于硅的深亚微米cmos工艺在RF设计中的可行性和困难进行了研究，评述了其中存在的问题。
It combines the RF, mixed-signal, and digital capabilities of any other CMOS process, yet is inherently rad-hard making it an ideal process for demanding space applications.
该技术将射频、混合信号和具有数字能力的任何其他CMOS工艺相混合，同时其固有的抗辐照能力，这使其成为空间应用场合的理想工艺。
CMOS technology on Silicon is widely used in digital circuit, mix-signal circuit, and rf circuits because of it's obvious advantages like high performance, high integration, low power, and low cost.
硅cmos工艺由于其高性能，高集成度，低功耗以及低成本等优点，已经在数字电路，混合信号电路，以及射频集成电路中被广泛应用。
Features of rf SOI CMOS technology are presented with emphasis on its low cross-talk characteristics and passive element performances.
介绍了RFSOICMOS技术的特点。着重论述了RF SOI CMOS技术的低串扰特性、低损耗特性及其优质无源元件的性能。
An RF front-end circuit for a fully integrated CMOS DTV tuner is presented in this paper, where double-conversion low IF architecture is employed.
该电路采用二次变频低中频结构，集成了低噪声放大器、上变频混频器、下变频混频器等模块。
RF engineers achieve wireless front end so frequently by employing CMOS technology which has low cost and high yield.
射频设计工程师越来越多的利用低成本高产量的CMOS技术来实现无线前端。
RF CMOS integrated circuits, low-cost, low power consume, it has become increasingly attracted people's attention.
而射频CMOS集成电路，由于成本低、功耗小，日益引起人们的重视。
RF CMOS integrated circuits, low-cost, low power consume, it has become increasingly attracted people's attention.
而射频CMOS集成电路，由于成本低、功耗小，日益引起人们的重视。
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