Minority carrier lifetime is an important parameter for PIN diodes.
少子寿命是PIN二极管的重要参数。
In this paper showed a measurement method of minority carrier lifetime.
本文提出了一种测量少数载流子寿命的方法。
All these three ways can improve the minority carrier lifetime effectively.
三种吸杂方式都能明显提高多晶硅的少子寿命。
Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
可以使用这些结果讨论一些薄片的少子寿命和表面复合速度。
The results show that the SOA carrier lifetime is the main factor that produces converted waveform distortion.
结果表明，半导体光放大器的载流子寿命是导致输出波形畸变的主要因素。
Improvement of high frequency photoconductive decay technique for measuring silicon minority carrier lifetime is described.
本文介绍高频光电导衰减法硅单晶少子寿命测试技术的改进。
The most aim is to found the rule of carbon effects oxygen deposition and the change of minor carrier lifetime in annealing.
其主要目的是通过不同温度的热处理，发现碳对氧沉淀影响的规律，以及热处理过程中硅片样品少子寿命的变化。
The sensitivity for the semiconductor minority carrier lifetime measurement system was determined using microwave photoconductance decay.
对微波光电导法测量半导体少数载流子寿命的测试系统进行灵敏度分析。
In addition to the role of compensation to achieve semi-insulating material, there are restrictions on mobility, carrier lifetime and so on.
带隙中的深能级束缚自由电子实现补偿作用外，还有限制迁移率及载流子寿命等特点。
The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.
用高频光电导衰减法（PCD）研究了热氧化钝化对直拉硅少子寿命的影响。
Open circuit voltage decay (OCVD) is attractive in the measurement of the minority carrier lifetime in the devices due to its straight, easy operation and good repeatability.
开路电压衰减法(OCVD)具有直接、简单、重复性好等特点，可准确测量器件的少数载流子寿命。
For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.
对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。
An extensive study has been carried out on the effect of thermal annealing on carrier lifetime and surface recombination velocity, which affect the final output of the solar cell.
我们又进一步研究了退火对少数载流子寿命和表面复合速率的影响，因为其对太阳能电池的最终效率影响很大。
The measurement results of complex dielectric constants of low loss and thin flake materials, conductivity and nonequilibrium charge carrier lifetime of semiconductor are introduced.
介绍了测量片状小损耗介质介电常数、半导体电导率及非平衡载流子寿命等参数的结果。
This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.
并使用连续性方程，在考虑表面复合过程的情况下，提出了短二极管的少子寿命计算公式。
And the decay rate of these deviations depends on not only the carrier lifetime but also the photon lifetime, which is different from that of an ordinary diode laser experiencing turn-on process.
该衰减率不仅与载流子寿命有关，还和光子寿命有关，这一点与普通半导体激光器“接通”时的动态行为有所区别。
The main results obtained are as follows:1. The ultra-fast characteristics of photoconductive switches were mainly determined by the optical pulse width and the carrier lifetime of the chip material.
光电导开关的超快特性主要由触发光脉冲脉宽和开关芯片材料载流子复合寿命决定。
An experimental method to determine minority carrier generation lifetime from the values of saturation capacitance under two different voltage sweep rates has been presented.
本文建议子一种由两个不同电压扫描率下的饱和电容值确定产生寿命的实验方法。
From the Ct transient curve obtained experimentally, the minority carrier generation lifetime in semiconductor can be determined.
根据扫描所得的电容-时间瞬态曲线，可确定样品中少于产生寿命。
The hot carrier effects (HCE) in MOSFET are studied in this paper. Based on MOSFET lifetime model of direct current, we present MOSFET lifetime model of dynamic stress.
研究了MOS器件中的热载流子效应，在分析了静态应力下MOSFET寿命模型的基础上，提出了动态应力条件下MOSFET的寿命模型。
The experiment shows that the bandwidth of the time delay as a function of the modulation frequency changes in the absorption and gain regimes due to the carrier-lifetime variation.
实验结果表明，由于载体寿命的变化，在吸收和增益区域，带宽的时滞随着调制频率的变化而变化。
A discussion of the implications of the new SEMI standards for carrier recombination measurements lifetime in silicon.
针对SEMI最新制订载子合复寿命量测标准的内含意义及讨论。
A discussion of the implications of the new SEMI standards for carrier recombination measurements lifetime in silicon.
针对SEMI最新制订载子合复寿命量测标准的内含意义及讨论。
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