The processes are closely related to carrier concentration and lattice temperature.
这个过程与载流子浓度和晶格温度有密切关系。
The carrier concentration of surface after CO2 laser irradiation can exceed the solid solubility limit.
经过激光处理后样品表面一薄层载流子浓度超过了杂质的固溶度极限。
The drift drain resistance model is derived from the free carrier concentration analyzing in the drift region.
以单位面积下漂移区自由载流子浓度为基础，得出漂移区电阻的解析模型。
In addition, with the carrier concentration and air velocity supply higher, EA and Ep will not decrease obviously.
并且在载体浓度较高和空塔气速较大时，新型生物流化反应器氧利用率和充氧动力效率没有明显降低。
It is indicated that the intrinsic carrier concentration increases more rapidly with increasing the doping concentration at low...
与常温情况相比，低温下本征载流子浓度将随杂质浓度的上升更为剧烈地上升。
A accurate expression for the bandgap and a simple formula for the intrinsic carrier concentration at low temperature are presented.
本文提出了低温区高精度的禁带宽度的表达式，获得了低温区本征载流子浓度的简明公式。
The rules of electron subband energies and corresponding wave functions depending upon free carrier concentration have been obtained.
得到了电子亚带能量和波函数随自由载流子浓度的变化规律。
The effect of the carrier concentration, silver nitrate concentration and immersion time on the bacterial inhibition rate ware studied.
研究了载体浓度、硝酸银浓度和浸渍时间对抑菌率的影响。
This change is attributed to the hole carrier concentration decreasing with lattice oxygen releasing supported by iodic titration result.
分析认为该电导出现极值的现象是因为高温晶格氧析出导致样品空穴载流子浓度降低所致。
The absorption spectra, exponential gain coefficient, diffraction efficiency and effect carrier concentration of the crystal were measured.
测试晶体的吸收光谱、指数增益系数、衍射效率和有效载流子浓度。
Mobile charged carriers migrating to the cold side to create a carrier concentration gradient thus giving rise to a thermoelectric voltage.
移动的载流子迁移到冷端后会形成载流子浓度差，从而在材料两端产生热电电压。
In order to improve the reverse recovery characteristic the excess carrier concentration close to the anode during the on-state has to be reduced.
为了改善反向恢复特性，必须降低通态过程中靠近阳极的过剩载流子浓度。
Electrochemical capacitance-voltage profiler(ECV)is the most convenient method to characterize the carrier concentration of compound semiconductor.
电化学C-V（ECV）法是当前测量化合物半导体载流子浓度分布的非常重要的方法。
Under room temperature conditions, the influence of measuring current and magnetic field on carrier concentration and mobility results are studied too.
在室温条件下测量电流和磁场的大小对载流子浓度和迁移率测量结果的影响。
The measurement of carrier concentration profiles over a wide range of doping le-vels and depths by using automatic electrochemical C-V profiling technique is described.
本文叙述了通过自动电化学c - V剖面图技术，在宽的掺杂和深度范围内，载流子浓度纵向分布的测量。
It is showed that bromine anions and charge transfer complex formed in the doping process enhanced the charge carrier concentration then promote the conductivity of PANI.
结果表明，和氢溴酸对PANI的质子酸掺杂不同，溴掺杂过程中产生的溴负离子增加了PANI的载流子浓度，形成了电子转移复合物，提高了聚苯胺的电导率。
The room temperature ferromagnetism in Co-doped ZnO films with different carrier concentration fabricated by the sol–gel method at different annealing atmospheres was investigated.
用溶胶–凝胶法制备的钴掺杂氧化锌薄膜在不同气氛下退火后均显示室温铁磁性，并且具有不同的载流子浓度。
It is indicated that the boron doping promotes the growth of (111) face of the diamonds, enhances acceptor level, narrow 's band gap and increases carrier concentration correspondingly.
其原因是硼元素的掺入促进了金刚石单晶的(111)晶面生长，使受主能级提高，晶体的带隙变窄，载流子浓度提高。
In the calculated doped state, the concentration of the holes is larger than that of the electrons, the conductive ratio is influenced by both the carrier concentration and transferring.
非计量掺杂碘时，空穴浓度大于电子浓度，载流子浓度和迁移率同时影响导电率。
The effects of competitive product inhibition are shown to increase the substrate concentration in the carrier, and, additionally, to increase the effectiveness factors slightly.
产物竞争性抑制的存在将增加载体颗粒内的底物浓度，对效率因子的影响较小。
The profiles of junction current and voltage and carrier-concentration in an injection laser with filament were calculated on the basis of a simple model.
本文从一简单模型出发，计算了丝状发光器件的电流密度、电压、载流子浓度和增益分布。
The influence of extracting medium, the acidity of sample, concentration of reductants, coexisting elements and carrier flow rate were studied and optimized.
研究了不同萃取介质、酸度、还原剂浓度、共存元素以及载流流速对氢化物发生的影响。
Of the problems of tube wear with powder, the influence of particle size, concentration and pressure of carrier gas on erosion was studied.
在粉料输送管道磨损问题中，研究了粉料粒度、输送浓度和输送气体压力对磨损量的影响。
The coefficient of Hall-effect decided by experiment can determine the type of semiconductor materials, the concentration of carrier, the mobility of carrier and other important parameters.
通过霍尔效应实验测定的霍尔系数，能够判断半导体材料的导电类型、载流子浓度及载流子迁移率等重要参数。
A new carrier gas evaporation method for concentration of acrylamide aqueous solution was proposed, its basic principle was analyzed and discussed, and its technological project was also introduced.
提出了一种丙烯酰胺水溶液浓缩的载气蒸发新方法，分析和讨论了该方法的基本原理，介绍了载气蒸发新方法的技术方案。
Therefore the dopant concentration profile measured by this method is a better approximation for practical carrier profile in silicon epitaxial layers.
因此，用此法测量的外延层分布是实际载流子分布的一种较好的近似。
Therefore the dopant concentration profile measured by this method is a better approximation for practical carrier profile in silicon epitaxial layers.
因此，用此法测量的外延层分布是实际载流子分布的一种较好的近似。
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