Therefore it is of great significance to synthesize and investigate the excellent boron-doped diamond single crystal.
因此，研究开发新型的优质金刚石单晶具有重要的现实意义。
The diamond films were fabricated by microwave plasma CVD and the boron-doped was created by the cold ion implantation.
本文采用微波等离子体cvd法制备定向生长的金刚石薄膜。用冷离子注入法对金刚石薄膜进行硼掺杂。
Considering the residual stress, the total stress analytical solutions for square-shaped boron-doped silicon diaphragms with large deflection are presented.
考虑残余应力的情况下，薄膜在大挠度时总应力的解析表达式。
The electrochemical properties of boron-doped diamond (BDD) thin film electrodes films and their applications to wastewater treatment have been investigated.
在本文中主要开展了硼掺杂金刚石薄膜的电化学性能及在污水处理中的应用研究。
The electrochemical oxidation of wastewater containing chlorophenols was investigated experimentally using synthetic boron-doped diamond(BDD) thin film electrodes.
以硼掺杂金刚石薄膜（BDD）为电极，采用电化学氧化的方法对含氯酚废水进行实验研究。
The results show that the specific resistance of the boron-doped diamonds significantly decreased with the increase of boron concentration and to be a semiconductor.
结果表明：随着触媒中碳化硼添加量的增加，含硼金刚石单晶的电阻率降低，可呈现半导体电阻特性。
The invention belongs to the technical field of environmental monitoring, relating to COD on-line monitoring device and method based on a boron-doped diamond membrane (BDD) electrode.
本发明属于环境监测技术领域，涉及一种基于硼掺杂金刚石膜(BDD)电极的COD在线监测装置和方法。
Electrochemical oxidation on boron-doped diamond (BDD) anode was used as pretreatment for 2-chlorophenol wastewater to improve its biodegradability, using DSA electrode as a comparison.
采用掺硼金刚石膜电极（BDD）电化学氧化的方法提高2-氯苯酚废水的可生化性，与钛基钌铱氧化物电极（DSA）进行对比，研究了该方法的机理。
The defect properties in chemical vapor deposition diamond films doped by sulfur and boron were investigated by the Doppler broadening measurements and electron paramagnetic resonance (EPR).
利用多普勒增宽谱和电子顺磁共振研究了掺硼和掺硫金刚石薄膜的缺陷状态。
The phenomenon of the blue range electroluminescence of the boron doped diamond thin films is reported, and the several light emission mechanisms on band A are summarized.
报道了金刚石薄膜的蓝区电致发光现象，总结了几种有关金刚石薄膜蓝区发光“A”带的发光机理。
We present an analytical solution for the total stress and mechanical sensitivity of highly boron doped si diaphragm with small deflection considering effect to result from the residual stress.
给出了小挠度下，在外界载荷作用下总应力表达式和薄膜机械灵敏度表达式，并分析了残余应力对二者的影响。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
The invention provides a bismuth doped silicate zinc boron based optical glass and a preparation method thereof.
本发明提供一种铋掺杂硅锌硼基光学玻璃及其制备方法。
The invention provides a bismuth doped silicate zinc boron based optical glass and a preparation method thereof.
本发明提供一种铋掺杂硅锌硼基光学玻璃及其制备方法。
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