It is designed to be used with a bias magnet south facing the back (non-marked) side of the IC.
在应用时需要时磁铁的南极面向芯片的底部（没有标签的面）。
Finally, we study the transport properties of single molecular magnet driven by spin bias voltage.
最后，我们研究了自旋偏压驱动的单分子磁体的量子输运特性。
Finally, we study the transport properties of single molecular magnet driven by spin bias voltage.
最后，我们研究了自旋偏压驱动的单分子磁体的量子输运特性。
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