通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c -V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
SOI衬底顶层硅呈现高阻状态，合适温度的退火可以明显降低SOI衬底顶层硅电阻率，也可部分减少外延高阻过渡层厚度。
The annealing at the proper temperature may decrease the resistivity of SOI substrate obviously and also improve the resistivity of epitaxial transitional layer partly.
SOI衬底顶层硅呈现高阻状态，合适温度的退火可以明显降低SOI衬底顶层硅电阻率，也可部分减少外延高阻过渡层厚度。
The annealing at the proper temperature may decrease the resistivity of SOI substrate obviously and also improve the resistivity of epitaxial transitional layer partly.
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