以一定的结构模型分析探讨并从实验上证实了非晶半导体中短程序、中程序的存在。
The structure model in amorphous semiconductor was analysed and probed into in this paper, and confirm the structure of middle and short range order in amorphous semiconductor by means of experiment.
在此基础上建造一个包含400个原子的非晶硅(锗)的结构模型，其主要参数均与实验符合得很好。
On the basis of the theory, a 400-atom structural model for a-Ge has been constructed. The main characteristics of the model are in good agreement with experimental results.
在此基础上建造一个包含400个原子的非晶硅(锗)的结构模型，其主要参数均与实验符合得很好。
On the basis of the theory, a 400-atom structural model for a-Ge has been constructed. The main characteristics of the model are in good agreement with experimental results.
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