本文介绍用直流辉光放电装置制备非晶硅薄膜。
Amorphous silicon films were fabricated with a dc glow discharge system.
研究了用于室温红外探测的非晶硅薄膜晶体管。
The a-Si thin film transistor (TFT) used as room temperature infrared detector is studied.
因此,制备器件级的非晶硅薄膜成为氢化非晶硅进一步应用的关键。
So, the device-quality a-Si:H films'preparation is becoming the key of the its further development and application.
介绍了一种非晶硅薄膜低温晶化的新工艺———金属诱导非晶硅薄膜低温晶化。
We developed a new process for low temperature crystallization of amorphous silicon films, by metal induced crystallization of amorphous silicon films at low temperature.
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。
Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.
本发明的提供了一种增加氢化非晶硅薄膜能带隙的方法,将氟元素加入到非晶硅材料中。
The invention provides a method for increasing the energy band gap of a hydrogenated amorphous silicon thin film, which adds fluorine elements into the amorphous silicon materials.
本论文针对热光可调谐光学薄膜滤波器的结构设计和非晶硅薄膜的PECVD制备工艺展开研究。
The research in this paper is mainly about the structural designing of the tunable thin film filter and the processing of amorphous silicon membrane depositing by PECVD.
单晶硅和多晶硅体太阳能电池成本居高不下,非晶硅和非晶硅薄膜太阳能电池又有光致衰退效应的困扰。
The cost of crystalline silicon and polycrystalline silicon solar cell is high steadily, amorphous silicon and amorphous silicon thin film solar cell has "optical-induced degradation".
高效、稳定、廉价的多晶硅薄膜太阳电池有可能替代非晶硅薄膜太阳电池成为新一代无污染民用太阳能电池。
Poly-silicon thin film solar cells with high efficiency, stability and low-cost would replace the a-Si thin film solar cells as a new generation of non-pollution civil solar cells.
讨论了非晶硅薄膜的制备和特性,以及非晶硅光敏和色敏传感器的结构和特性,也简述了非晶硅光敏和色敏传感器的某些可能的应用。
The preparations and properties of the a-Si:H films, the structures and properties of the sensors from a-Si:H films are discussed. Also, some possible application of the sensors arc briefly stated.
以玻璃为基底的非晶硅图形式结晶,对于研制用于矩阵液晶显示的薄膜半导体具有重要意义。
Patterned crystallization of amorphous silicon (a-Si) on substrates of glass is very important for the fabrication of thin film transistor used in active matrix liquid crystal displays.
用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。
The optical emission spectrum of r. f. plasma during amorphous silicon based film etching in CF4 gas is detected.
在诸多轻质衬底薄膜太阳电池中,柔性衬底非晶硅基薄膜太阳电池在很多方面占有优势。
In these solar cells, flexible thin film amorphous silicon solar cells are attached importance for their advantages in many aspects.
本发明涉及一种多结叠层非晶硅太阳能电池,在叠层之间增设透明反射膜,属薄膜太阳能电池制造领域。
The present invention relates to a multi-stack amorphous silicon solar battery, which adds a transparent reflection film between the stacks and belongs to the thin film solar battery making field.
另外,薄膜硅技术也被开发出来,将非晶硅或者微晶硅薄膜放到玻璃那样的平的大面积衬底上。
Besides, thin-film silicon technologies have also been developed to place a thin film of amorphous or microcrystalline silicon onto flat large-area substrates such as glass.
结果表明:薄膜由非晶硅结构转变为微晶硅结构,微晶硅晶粒尺寸在纳米级。
The results indicate that the amorphous film gradually transfers into microcrystalline Si, and the grain size is nanometer order of magnitude.
现在您可以利用太阳的力量,通过正确的屋顶瓦,使用薄膜三重结非晶硅技术。
Now you can harness the sun's power right through roof shingles, thanks to a technology called thin-film triple-junction amorphous silicon.
在非 晶硅薄膜子电池的顶层上生成有透明导电的ITO防反射层。
A transparent conductive ITO anti-reflection layer is generated on a top layer of the amorphous silicon thin film sub-battery.
大部分太阳能电池板是由晶体硅制成,但是,你也可以用非晶硅制成太阳能电池,这种非晶体硅通常被叫作薄膜硅。
Most solar panels are made with crystalline silicon, but you can also make solar cells out of amorphous silicon, commonly known as thin-film silicon.
利用不同方法测量了硅薄膜样品的各种特性,证实了薄膜确为非晶硅。
The properties of silicon film were detected by different methods, the film amorphoasness was evidenced.
本发明公开了一个使包括氢化非晶硅和氢化纳米晶硅的氢化硅薄膜具有真正本征性的方法。
The present invention discloses a method for making the hydrogenated si containing hydrogenated amorphous silicon and hydrogenated nanocrystalline silicon has real intrinsic capability.
本发明公开了一个使包括氢化非晶硅和氢化纳米晶硅的氢化硅薄膜具有真正本征性的方法。
The present invention discloses a method for making the hydrogenated si containing hydrogenated amorphous silicon and hydrogenated nanocrystalline silicon has real intrinsic capability.
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