模拟结果表明，缓冲层与透明阳极各自区域中的杂质总量是决定GCT的通态压降的关键因素。
Simulation results show that the total amount of impurity in the buffer layer or transparent an - ode is the key to determine the on-state voltage drop of GCT device.
模拟结果表明，缓冲层与透明阳极各自区域中的杂质总量是决定GCT的通态压降的关键因素。
Simulation results show that the total amount of impurity in the buffer layer or transparent an - ode is the key to determine the on-state voltage drop of GCT device.
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