通过设置死区时间实现开关功率器件的零电压开通与关断，利用该变换器研制出GTO门极驱动用电源。
The turn-on and turn-off of power devices under zero voltage are realized with addition of dead time. The power supply for GTO gate driver is developed by use of the converter.
论文介绍了IGCT器件性能参数、门极驱动电路的基本工作原理，对IGCT、GTO和IGBT的特点进行了对比。
The paper introduces the performance parameters and the fundamental principle of gate drive circuit, and compares the features of IGCT, GTO and IGBT.
集成门极换流晶闸管IGCT是一种新型的电力电子器件，是将门极驱动电路和门极换流晶闸管GCT集成于一体的器件。
First developed by ABB Company, IGCT ( Integrated Gate Commutated Thyristor)is a new sort of power semiconductor, which integrates its gate device with the thyristor.
它的关键思想是将改进结构的GTO与反并联二极管和门极驱动电路集成在一起，再与其门极驱动器在外围以低电感方式连接。
Its key idea is that integration of GTO with improved structure, antiparallel freewheeling diode and gate drive circuit, then connects its gate drive by low inductance.
该IX2120B补充IXYSICD广泛的高压栅极驱动器，低侧栅极驱动器，光隔离门极驱动器及全系列IXYS功率半导体的产品组合。
The IX2120B complements IXYS ICD's extensive portfolio of high voltage gate drivers, low side gate drivers, optically isolated gate drivers and the full range of IXYS power semiconductors.
同时，采用专用芯片SG3525来产生脉宽调制电路，由IR2110组成的驱动电路来驱动绝缘门极双极晶体管（IGBT）。
Special chips, such as SG3525 and IR2110 are also used to generate PWM and to drive the IGBT.
IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。
IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit.
IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。
IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit.
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