采用柠檬酸盐法制备铌酸锂铁电薄膜。
The citrate method was adopted to prepare LiNbO3 ferroelectric film.
本文研究了有机铁电薄膜的极化疲劳过程。
In this paper we report the studies on polarization fatigue in ferroelectric vinylidene fluoride and trifluoroethylene copolymer films.
研究了铋层类钙钛矿结构铁电薄膜的极化疲劳问题。
Fatigue problem of bismuth layered structure perovskite thin films (BLTF) is investigated.
最后简要地指出了铁电薄膜的理论与应用研究的前景。
Finnlly, it is concisely pointed out the prospects of ferroelectric thin film study and applications.
最后简要地指出了铁电薄膜的理论与应用研究的前景。
Finnlly, it is concisely pointed out the prospects of ferroelectric thin film study and application...
制备方法：一、在基底上沉积钛酸铅镧钙系铁电薄膜；
The preparation method comprises the following steps: 1. lanthanum and calcium modified lead titanate ferroelectric thin film is precipitated on a substrate;
铁电薄膜是一类重要的功能材料，铁电畴是其物理基础。
The piezoresponse force microscopy(PFM) is a useful method to study ferroelectric domains of ferroelectric films.
近年来，PLZT铁电薄膜制备方法与应用研究引人注目。
In recent years, PLZT ferroelectric thin films have gained attention in processing methods and applications.
本文用朗道自由能展开研究了有电畴的铁电薄膜的相变特性。
The phase transition characteristics of ferroelectric films with domain structure were studied using Landau free energy expansion.
在此基础上本文又进行了pzt铁电薄膜的掺杂性能的研究。
This paper studied the properties of the PZT films modified by the introduction of some dopants.
此外，随退火温度升高，铁电薄膜的自发极化强度先增强后减弱。
The spontaneous polarization of ferroelectric films was strengthened and then weakened with the increasing of annealing temperature.
结果表明，制得的LNO薄膜可用作集成铁电薄膜器件的底电极。
Our results showed that the LNO thin films could be used as bottom electrodes for integrated ferroelectric thin film devices.
具有铁电性且厚度尺寸为数十纳米到数微米的膜材料叫铁电薄膜。
The ultrathin materials which show ferroelectricity and the thickness of which is from several ten nanometers to a few microns are called ferroelectric thin film.
在这些器件的制作过程中，铁电薄膜的微图形化是非常重要的一环。
In the preparing process of these devices, the micropatterning of ferroelectric thin films is very important.
在这些应用中，制备供集成铁电薄膜的优质底电极就显得尤为重要。
In these applications, it is essential to fabricate high quality ferroelectric thin films on proper electrode materials, such as conductive oxides.
重点介绍了铁电薄膜在铁电存储器及热释电红外探测器方面的应用。
Applications of the films, especially in ferroelectric memories and pyroelectric infrared detectors are described.
压电响应力显微镜为铁电薄膜电畴的研究提供了一种有效的检测方法。
The piezoresponse force microscopy(PFM) is a useful method to study ferroelectric domains of ferroelectric films.
PS T铁电薄膜是一种具有优良铁电、热释电和介电等性能的铁电材料。
PST thin films are ferroelectric materials with many advantages such as excellent ferroelectric, pyroelectric and dielectric properties.
研制出单元和8元、9元、10元线列铁电薄膜热释电非致冷红外传感器。
Ferroelectric thin film single element uncooled pyroelectric infrared sensors and 8, 9, 10 element uncooled sensing liner arrays were developed.
对铁电薄膜施加一个适当的外力，可以大幅度的提高薄膜的介、压电系数。
The dielectric and piezoelectric responses could be improved by applying an appropriate external stress to the film.
而漏电流进一步降低，且降幅增大，这对提高铁电薄膜的性能有一定的意义。
The leakage current was also observed to decrease, which is useful for improving the properties of the thin films.
实验表明，采用合适的工艺参数能制备出具有钙钛矿型结构的PZT铁电薄膜。
The experiments show that the PZT ferroelectric thin film with pe-roskite structure can be produced using reasonable process parameters.
本论文利用扫描力显微镜研究了铁电薄膜表面与界面的电势及电畴等微区性质。
In this thesis, Scanning Force Microscopy (SFM) was used to study the nanoscale electric phenomena of the surface and interface properties of ferroelectric thin films.
对两种铁电薄膜的厚度、XRD图谱、SEM图像和电滞回线进行了比较和分析。
The thickness, XRD images, SEM pictures and electric hysteresis loops of these two thin films were analyzed and compared.
本文运用KA模型研究了铁电薄膜的电畴反转特性与外加电场强度以及温度的关系。
The dependence of domain reversal characteristics of the ferroelectric thin film on external electric field and temperature is investigated by using the KA model.
简要综述了近年来国外在钙钛矿型铁电薄膜疲劳机制和消除疲劳措施方面的研究进展。
In this paper, the recent progresses on the fatigue mechanisms and the methods to mitigate fatigue of perovskite ferroelectric thin films are reviewed briefly.
进一步分析发现，膜厚通过影响矫顽场强和最大极化强度进而影响铁电薄膜的电压非线性。
It is found that the film thickness dependence of the dielectric nonlinearity is determined by that of the coercive electric field and the maximal polarization.
薄膜生长技术的进展，为压电和铁电薄膜集成固体器件在各个领域的应用开辟了广阔的前景。
Through the progress of film growth technology, new prospects are created in a wide range for integrated solid state devices made of piezoelectric and ferroelectric films.
薄膜生长技术的进展，为压电和铁电薄膜集成固体器件在各个领域的应用开辟了广阔的前景。
Through the progress of film growth technology, new prospects are created in a wide range for integrated solid state devices made of piezoelectric and ferroelectric films.
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