铁电场效应晶体管(FFET)存储器能够实现非破坏性读出,是一种比较理想的存储方式,因此从一开始就受到人们极大的关注。
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
铁电场效应晶体管(FFET)存储器能够实现非破坏性读出,是一种比较理想的存储方式,因此从一开始就受到人们极大的关注。
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
应用推荐