本发明方法制备的金属硅化物层热稳定性高，且生长速度可控。
The metal silicide layer prepared by the method has high heat stability and controllable growth speed.
因此在硅基底上形成金属硅化物薄膜也被广泛应用于半导体工业。
The formation of silicides from the reaction between deposited thin metal films and Si substrates has wide application in the semiconductor industry.
阐述了稀土金属硅化物的生长工艺和与硅衬底间势垒及界面特性。
The growth techniques, the barrier states and the interfaces for rare earth silicides were thoroughly described.
一种微波氢等离子体制备金属硅化物薄膜的方法，用于薄膜制备领域。
The invention is a preparation method of metal silicide film by microwave hydrogen plasma, relates to film preparation field.
本发明属于微电子器件技术领域，具体为一种形成超薄可控的金属硅化物的方法。
The invention belongs to the technical field of microelectronic devices, in particular to a method for forming ultrathin controllable metal silicide.
本发明公开了一种金属硅化物的形成方法，包括步骤：提供一表面含硅材料的衬底；
The invention discloses a forming method for metal silicide, which comprises the following steps of: providing a substrate with the surface having silicon material;
目前主要的改善方法是向铝包镍中添加元素，例如：添加金属钼、镍硼粉和难熔金属硅化物等。
The main measurement to improve its properties is to add something to the nickel-aluminum system, such as metallic molybdenum, nickel-boron and refractory metal silicates.
本文综述了稀土硅化物的特性、制备技术及其进展。介绍了稀土金属硅化物在器件方面的应用。
The characteristics of re silicides and the progress in preparation of re silicides are summarized, and their applications in devices are introduced.
特别是，当难熔金属硅化物薄膜是硅化物薄膜的钨，铜的浓度最好，它在0.1至1.0范围为野生。%。
In particular, when the refractory metal silicide film is a tungsten silicide film, the concentration of cu is preferable that it is in the range of 0.1 to 1.0 wt. %.
进行第二次退火以便将通过第一次退火的两次热循环形成的富金属硅化物相转化成处于其最低电阻相的金属硅化物(68)相。
A second anneal is performed to convert the metal rich silicide phase formed by the two thermal cycles of the first anneal into a metal silicide (68) phase that is in its lowest resistance phase.
进行第二次退火以便将通过第一次退火的两次热循环形成的富金属硅化物相转化成处于其最低电阻相的金属硅化物(68)相。
A second anneal is performed to convert the metal rich silicide phase formed by the two thermal cycles of the first anneal into a metal silicide (68) phase that is in its lowest resistance phase.
应用推荐