量子隧穿效应是指粒子能够穿过正常来说它的能量不足以通过的障碍。
Quantum tunneling is an effect where a particle can pass through a barrier it would not normally have the energy to overcome.
自从对于锥形分子，其分子内的重新组合的量子隧穿效应1927年被证实以来，人们在研究隧穿效应上做了大量的工作。
Since the quantum tunneling for intramolecular rearrangements in pyramidal molecules was testified in 1927 a lot of work has been done to study the tunneling.
隧穿磁强计是一种利用量子力学中隧道效应原理研制的MEMS磁强计。
Tunneling magnetometer is a kind of MEMS magnetometer based on tunnel effect in quantum mechanics.
研究了电路量子态的演化，电路中电荷及电流的量子压缩效应以及介观电容器中隧穿电流的量子崩塌与复苏现象。
Subsequently, we study the evolution of the quantum state, the quantum squeezing effects of the charge and the current, and the quantum CR phenomenon of the tunneling current in the capacitance.
造成这种不对应的原因是量子上所特有的隧穿效应。
在多量子阱结构中可看到明显的共振隧穿效应。
提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型。
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
电子在元件中利用量子穿隧效应流动，少量的电子可穿过绝缘层的障碍到达另一边。
Current flows through the device by the process of quantum tunneling: a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator.
电子在元件中利用量子穿隧效应流动，少量的电子可穿过绝缘层的障碍到达另一边。
Current flows through the device by the process of quantum tunneling: a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator.
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