增强的空穴沟道迁移率导致导通电阻的沟道部分减小,因此,有利地减少了装置的全“导通”电阻。
The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total 'on' resistance of the device.
增强的空穴沟道迁移率导致导通电阻的沟道部分减小,因此,有利地减少了装置的全“导通”电阻。
The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total 'on' resistance of the device.
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