提出了一种能够自产生基准电压和偏置电流，并且锁定阈值电压和迟滞量稳定的新型欠压锁定电路。
A novel under-voltage lockout circuit is proposed which could generate reference voltage and bias current itself, and could stabilize lockout threshold voltage and hysteresis quality.
建立了由粘性阻尼和迟滞阻尼组成的电流变流体阻尼模型，通过对模型的傅立叶变换及数值仿真，验证了理论分析及阻尼模型的正确性。
Damping model of er fluid which included the viscous and hysteresis damping is established and proved to be effectiveness through Fourier transformation and numerical simulation.
采用平面选择注入隔离工艺制作MESFET及旁栅电极，通过改变半导体特性测试仪的延迟时间参数，深入研究了不同沟道电流的数据采集时间对旁栅效应迟滞现象的影响。
The influence of different data collection time of channel current on the side gating hysteresis effect is studied by changing the delay time of semiconductor characteristic testing set.
采用平面选择注入隔离工艺制作MESFET及旁栅电极，通过改变半导体特性测试仪的延迟时间参数，深入研究了不同沟道电流的数据采集时间对旁栅效应迟滞现象的影响。
The influence of different data collection time of channel current on the side gating hysteresis effect is studied by changing the delay time of semiconductor characteristic testing set.
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