在这个区内的载流子浓度被消耗殆尽。
本文提出了一种测量少数载流子寿命的方法。
In this paper showed a measurement method of minority carrier lifetime.
这一现象可定性地用自由载流子吸收来解释。
This phenomenon may be explained qualitatively by means of free carrier absorption.
这个过程与载流子浓度和晶格温度有密切关系。
The processes are closely related to carrier concentration and lattice temperature.
微分增益系数随薄层载流子密度的增加而降低。
The differential gain coefficient decreases with increased sheet carrier density.
耗尽层-晶圆片上的电场区域，此区域排除载流子。
Depletion Layer - a region on a wafer that contains an electrical field that sweeps out charge carriers.
本文提出了一种新的多晶硅发射区少数载流子注入理论。
A new theory about minority carrier injection into polysilicon emitter has been proposed in this paper.
对深亚微米器件中热载流子效应(hce)进行了研究。
The hot carrier effects (HCE) in deep sub-micron devices has been studied.
得到了电子亚带能量和波函数随自由载流子浓度的变化规律。
The rules of electron subband energies and corresponding wave functions depending upon free carrier concentration have been obtained.
本文提出了一种新的测量半导体材料中少数载流子寿命的方法。
A new method for measuring the life time of minority current carriers in semiconductors is described.
详细地分析了源、漏电极接触区和沟通区内载流子的输运特性。
The properties of the carrier transport in the regions of source, drain contact and channel are analyzed in detail.
测试晶体的吸收光谱、指数增益系数、衍射效率和有效载流子浓度。
The absorption spectra, exponential gain coefficient, diffraction efficiency and effect carrier concentration of the crystal were measured.
其中，第一个晶粒间界能够最有效地减少注入饱和少数载流子电流。
The injecting saturate minority carrier current may be reduced the most effectively by the first grain boundary.
本方法已成功地用于高阻硅材料杂质补偿度和载流子迁移率的测量。
This method has been successfully applied to the measurements of impurity compensation and carrier mobility on high resistivity silicon materials.
半导体器件，半导体器件制造方法，高载流子迁移率晶体管和发光器件。
Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device.
以单位面积下漂移区自由载流子浓度为基础，得出漂移区电阻的解析模型。
The drift drain resistance model is derived from the free carrier concentration analyzing in the drift region.
结果表明，半导体光放大器的载流子寿命是导致输出波形畸变的主要因素。
The results show that the SOA carrier lifetime is the main factor that produces converted waveform distortion.
分析有源区内载流子和VCL光子密度的变化，揭示了增益钳制的物理机理。
Analyzing the carrier density and photon density of VCL in active region, the physical mechanism of gain clamping was revealed.
在LED电极欧姆接触中，载流子在金属电极和半导体间有不同的传输机制。
In the Ohmic contacts of LED electrodes, carriers have different transmission mechanisms be - tween metal electrode and semiconductor.
在室温条件下测量电流和磁场的大小对载流子浓度和迁移率测量结果的影响。
Under room temperature conditions, the influence of measuring current and magnetic field on carrier concentration and mobility results are studied too.
限制层在提供光学限制的同时，对载流子（主要是导带电子）分布也有影响。
The SCH layer can provide optical confinement, but at the same time, it also affects the distribution of the carrier(especially to the electrons in conduction band).
然后基于半导体的速率方程理论，建立了载流子浓度随时间变化的数学模型。
Secondly, mathematical model of time-resolved carrier density has been established on the base of semiconductor rate equation theory.
本文简略地介绍处理半导体中热载流子输运的一个解析方法——平衡方程方法。
We give a brief review of a balance-equation approach to hot carrier transport in semiconductors.
利用少数载流子的稳态连续性方程和半导体材料对光的吸收，求出光电流的表达式。
We utilize the minority carrier equilibrium continuity equations and semiconductor material absorption of photo to get the expression of current induced by photo.
本文通过衬底热载流子注入技术，研究了热载流子增强的超薄栅氧化层TDDB效应。
Hot-carrier enhanced TDDB effect of ultra-thin gate oxide is investigated by using substrate hot-carrier injection technique.
该表达式可以用来预测激光器激射工作时，两段载流子浓度和激射波长之间的相互关系。
Using this expression, the interrelation of the carrier density in each segment and the emission wavelength can be predicted while the laser is lasing.
介绍了测量片状小损耗介质介电常数、半导体电导率及非平衡载流子寿命等参数的结果。
The measurement results of complex dielectric constants of low loss and thin flake materials, conductivity and nonequilibrium charge carrier lifetime of semiconductor are introduced.
载流子的热弛豫过程与扩散过程在整个衰减过程中所占的比例，取决于激发光子的能量。
The proportion between the thermalization process and diffusion process possess in all the decay process is determined by photon energy of excitation.
本文认为多余载流子的产生来源于中子辐照造成的晶格损伤缺陷，并与原始单晶缺陷有关。
We think that the excess carriers are generated from the lattice damage defects caused by the neutron irradiation, and may be affected by the as-grown defects of FZSi.
本文认为多余载流子的产生来源于中子辐照造成的晶格损伤缺陷，并与原始单晶缺陷有关。
We think that the excess carriers are generated from the lattice damage defects caused by the neutron irradiation, and may be affected by the as-grown defects of FZSi.
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