为了使砷化镓场效应管具有建立振荡所需的负阻，我们将其配置为共源结构并在漏极添加合适的开路微带线。

In order to make the GaAs FET having the required negative resonator to oscillator, we use the common source configuration and add the appropriate drain open stub microwave line.

youdao

为了使砷化镓场效应管具有建立振荡所需的负阻，我们将其配置为共源结构并在漏极添加合适的开路微带线。

In order to make the GaAs FET having the required negative resonator to oscillator, we use the common source configuration and add the appropriate drain open stub microwave line.

youdao