利用CMOS工艺下衬底型双极晶体管的温度特性，设计了一种精度较高的温度传感器。
A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology.
此外，缓冲层可以减少晶体管之间的设备和硅衬底平行的传导问题。
In addition, the buffer layer can mitigate parallel conduction issues between transistor devices and the silicon substrate.
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。
The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage.
此外，缓冲层地址和缓解晶格薄膜之间的不匹配而相对形成晶体管和硅衬底上。
In addition, the buffer layer addresses and mitigates lattice mismatches between the film relative to which the transistor is formed and the silicon substrate.
一种用于阵列器件的晶体管电路包括并联电连接且设置在同一衬底上的多个薄膜晶体管。
A transistor circuit for an array device comprises a plurality of thin film transistors electrically connected in parallel and provided on a common substrate.
本发明公开一种半导体功率组件，其包括若干功率晶体管记忆胞，该记忆胞被开设于一半导体衬底中的沟槽所围绕。
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate.
本发明公开了一种采用有源层图形化制备有机场效应晶体管的方法，包括：在绝缘衬底上涂敷光刻胶；
The invention discloses a method for preparing an organic field effect tube by using active layer graph. The method comprises the following steps of: coating photoresist on an insulated substrate;
在本结构中，钝化层(112)位于衬底(110)之上，在垂直双极型晶体管(118)和CMOS晶体管(116)之间。
In this structure, a passivating layer (112) is positioned above the substrate (110), and between the vertical bipolar transistors (118) and the CMOS transistors (116).
本发明提供了一种薄膜晶体管衬底和具有这种薄膜晶体管衬底的显示装置，这种薄膜晶体管衬底能够减小电容器中的层间短路缺陷。
The present invention provides a thin film transistor substrate realizing reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate.
本发明提供了一种薄膜晶体管衬底和具有这种薄膜晶体管衬底的显示装置，这种薄膜晶体管衬底能够减小电容器中的层间短路缺陷。
The present invention provides a thin film transistor substrate realizing reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate.
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