栅极线和数据线可以形成于绝缘衬底上。
The gate and data lines may be formed on the insulating substrate.
消除这个问题的一个方法是把器件制造在绝缘衬底的硅岛上，如图32所示。
A way to circumvent the problem is to fabricate devices in small islands of silicon on an insulating substrate as shown in Fig. 32.
开关元件可以形成于像素区域中的绝缘衬底上，像素区域由彼此相邻的栅极线和数据线限定。
The switching element may be formed on the insulating substrate in a pixel region defined by gate and data lines adjacent to each other.
本发明公开了一种采用有源层图形化制备有机场效应晶体管的方法，包括：在绝缘衬底上涂敷光刻胶；
The invention discloses a method for preparing an organic field effect tube by using active layer graph. The method comprises the following steps of: coating photoresist on an insulated substrate;
讨论了高频辉光放电等离子体系统中绝缘衬底表面的自负偏压问题，用等效电路方法给出了自负偏压的数学解析。
Selfnegative bias on insulate substrate surface of rf glow discharge plasma reactors is studied theoretically. The mathematical analysis has been obtained by equivalent circuit method.
左和右电荷存储区都具有半导体衬底上的薄氧化物层、薄氧化物层上的氮化物层和氮化物层上的绝缘氧化物层。
Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.
一种制造半导体器件的方法，包括，在衬底上形成绝缘图形。
A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate.
第一绝缘层位于衬底上，以及第二绝缘层位于第一绝缘层上。
A first insulating layer is on the substrate, and a second insulating layer is on the first insulating layer.
研究了硅衬底导电率变化对金属绝缘半导体传输线的分布电阻和分布电感参数的影响。
Examples are given to illustrate that the change of silicon substrate conductivity affects distributed parameters of MIS transmission line.
该半导体器件的一种包括半导体衬底、公共栅极电极和栅极绝缘层。
A semiconductor device may include a semiconductor substrate, one common gate electrode, and one gate insulating layer.
由此，能获得其中翘曲较少且较不可能发生破裂的半绝缘氮化物半导体晶体衬底。
Thus, the semi-insulating nitride semiconductor crystal substrate in which warpage is less and cracking is less likely can be obtained.
第三，亚微米梁由金引线提供力学支撑，金引线与衬底间电学绝缘；
Thirdly, the beam is supported by Au electrode and insulated from the substrate.
栅极电极完全围绕所述半导体衬底的所述鳍的至少一部分并与所述半导体衬底绝缘。
A gate electrode may surround at least a portion of the fin of the semiconductor substrate. The gate electrode may be insulated from the semiconductor substrate.
栅极绝缘层置于所述栅极电极和所述半导体衬底的所述鳍之间。
A gate insulation layer may be interposed between the gate electrode and the fin of the semiconductor substrate.
包括N型体晶硅体颗粒（01），铝衬底 （02），中间绝缘层（05），表面透明导电层（06）和减反射层（07）构成。
The solar cell includes N-type crystalline silicon particles (01), aluminum substrate (02), middle insulating layer (05), surface transparent conductive layer (06) and antireflection layer (07).
所述半导体衬底可以是SOI（绝缘体上硅）结构。
The semiconductor substrate may be an SOI (silicon on insulator) structure.
所述半导体衬底可以是SOI（绝缘体上硅）结构。
The semiconductor substrate may be an SOI (silicon on insulator) structure.
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