本文介绍用激光掺杂技术在高阻硅中掺入杂质来制造核辐射结型探测器的方法。
In this paper fabrication of nuclear radiation detectors by using laser-doping technique is reported.
设计并实现了一种用硅双结色敏器件作为探测器，单片机作为控制器，PC作为处理器和显示器的光功率、波长同步测量系统。
A system of measuring light power and wavelength is designed and fabricated, using Silicon Color Sensor with double PN junction as detector, single chip processor as controller and PC as processor.
在反向工作电压作用下，网孔区将被耗尽，成为PN结与表面耗尽区结构统一的光探测器。
The hole range of the net will be depleted entirely under bias voltage. The structure becomes PIN and surface depletion layer structure.
在反向工作电压作用下，网孔区将被耗尽，成为PN结与表面耗尽区结构统一的光探测器。
The hole range of the net will be depleted entirely under bias voltage. The structure becomes PIN and surface depletion layer structure.
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