本文综述了深亚微米光刻和纳米光刻技术。
In this article, deep submicron lithography and nano processing are reviewed.
纳米光刻技术是制作纳米结构的基础，具有重要的应用前景。
The fabrication of nanostructures, an important part of nanotechnology, is based upon nanolithography which will be widely employed in the future.
具有角度限制的电子束投影曝光技术有可能成为21世纪最有潜力的纳米光刻技术之一。
The projection electron beam lithography with angular limitation(PEBL)is potentially one of the most attractive techniques for nano lithography in the21st Century.
纳米结构制作是纳米技术的重要组成部分，原子光刻技术是纳米图形制作的一项新方法。
Fabrication of nanostructures is an important part of nanotechnology, and atom lithography technology is a new nanostructure fabrication method.
超精密气浮工件台系统是当前主流光刻机中的核心子系统，要求具有纳米级的重复定位精度和同步运动精度。
Stage system is one of the most important sub systems in a step and scanner, the accuracy of its positioning and synchronizing has reached nanometer level.
的框架内这一技术过程是计划使用193纳米沉浸光刻。
Within the framework this technical process is planned to use 193 nm immersion lithograph.
针对纳米压印光刻技术中压印脱模后的留膜去除问题，提出了一种基于光刻版的无留膜紫外纳米压印技术。
For the removal of residual layer after template is released during nanoimprint lithography, a new UV-nanoimprint technology without residual layer based on photolithography mask was proposed.
利用电子束光刻技术制作了基于钛酸钠纳米线的纳米器件。
Individual sodium titanate nanowire-based device is fabricated via e-beam lithography techniques.
纳米压印光刻技术主要包括热压印、紫外固化压印和微接触法压印。
There are a few varieties in nanoimprint, which can be loosely divided into hot embossing, UV-cured imprinting, and micro-contact printing.
德国米铱公司提供的电容式位移传感器被用于以纳米级的精度校准芯片光刻机中镜片的位置，测量晶圆厚度等应用。
Capacitive sensors from Micro-Epsilon are used, among other things, for the positioning, displacement measurement and thickness measurement in the semiconductors area.
纳米压印作为非光学的下一代光刻技术，具有分辨率高、成本低、产率高等诸多优点，因而可能应用于将来的半导体制造中。
Nanoimprint, as a non-optical lithography technology , has demonstrated its ability for semiconductor manufacturing by offering resolution below sub-10nm feature size, high throughput and low cost.
除了半导体外，纳米压印光刻技术也有其他应用？
Status Offline Nanoimprint has applications other than semiconductors.
根据对有机引发剂条件下的光刻胶过程的分析得出了纳米级实体图。
According to the analysis of the photoresist process that got organic initiator conditions, nanometer of physical map was obtained.
纳米压印光刻技术具有效率高、失真率低、易于实现大面积图形转移等特点，成为下一代光刻技术的研究热点。
Nanoimprint lithography becomes a hot focus of novel lithography technologies of next generation due to its advantages of low cost, high yield and fidelity of large area pattern transfer.
纳米压印光刻技术具有效率高、失真率低、易于实现大面积图形转移等特点，成为下一代光刻技术的研究热点。
Nanoimprint lithography becomes a hot focus of novel lithography technologies of next generation due to its advantages of low cost, high yield and fidelity of large area pattern transfer.
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