先沉积氮化硅薄膜再氢等离子体处理能得到更好的钝化效果。
Depositing SiNx thin film followed by hydrogen plasma treatment will result in better passivation effect.
用高能量密度脉冲等离子体于室温下在氮化硅陶瓷刀具上成功沉积了高硬耐磨的氮化钛涂层。
Hard and wear-resistant titanium nitride coatings were deposited by pulsed high energy density plasma technique on silicon nitride ceramic cutting tools at ambient temperature.
主要阐述了采用自制新型水介质等离子弧设备对氮化硅陶瓷材料进行加热辅助切削的试验条件及过程。
This paper introduces the experiment condition and process to carry out hot cutting on silicon nitride ceramics materials with new self-made water-plasma arc equipment.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
利用等离子体增强化学气相沉积（PECVD）工艺，在不同射频功率，不同反应气压条件下制备了氮化硅薄膜。
SiN thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) under various power and pressure conditions.
采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。
Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.
采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。
Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.
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