深离子注入调整源漏穿通电压。
本文综述了离子注入的应用研究进展。
轻离子注入形成典型的光学位垒型光波导。
The light ion implanted waveguide has been demonstrated to be a typical barrier-confined waveguide.
用离子注入技术保证电路具有较好的一致世。
The ion implantation technology is used for a good uniformity of the circuit performance.
注入样品的温升对离子注入层的性能有直接影响。
Temperature rise of implanted samples have direct influences on properties of ion implantation layer.
氦离子用等离子体浸没离子注入技术注入硅片中。
Helium ion was implanted by plasma immersion ion implantation technology.
上述结果验证了离子注入生物分子的质能双重效应。
Above results prove that ions implantation to biomolecules has the mass deposition effects and energy effects.
但本月初，科学家们将质量更大的铅离子注入了大型强子对撞机。
But earlier this month, heavier lead ions were injected into the LHC.
本文主要介绍了硅中硼离子注入校准样品的制备与研究。
Fabrication and research of calibration samples for boron ion implantation into silicon are discussed.
本文评述了在金属材料领域中应用离子注入技术的现状；
The present situations of applying ion implantation technique in metallic materials are reviewed.
本文叙述了辉光放电等离子体源的等离子体源离子注入。
In this paper, a glow discharge plasma source ion implantation technique is described.
讨论了钛离子注入剂量对铅及铅-锑合金耐蚀能力的影响。
The effect of titanium ion implantation dosage on the corrosion behaviors was discussed.
分析了光刻图形侧墙斜坡对离子注入后图形特征尺寸的影响。
Influences of side-wall slope of photolithography pattern on characteristic dimensions after ion implantation are analyzed.
位错的形成与离子注入引进的损伤和淬火过程中的热应力有关。
The ion-implantation damage defects and thermal stress during quenching step are responsible for the formation of dislocations.
对进一步应用离子注入强化精密轴承表面的工作做了试验研究。
Furthermore, application of ion implantation to strengthening surface of precision bearing race has been studied.
离子注入生物诱变是不同于传统辐射生物学的人工诱变新方法。
Ion implantation biological mutation is a new different artificial mutation method from the traditional irradiation biology.
利用高功率连续CO_2激光定点辐照，对砷离子注入的硅片进行退火。
Stationary irradiation of high power CW CO2 laser is used for annealing of arsenic ion implanted silicon.
等离子体源离子注入技术是一种新型的非视线的离子注入材料表面改性技术。
Plasma source ion implantation is a new non-line of sight ion implantation technique for surface modification of materials.
阐述了国内离子注入金属材料改性技术所取得的研究成果及国外的研究概况；
The domestic research achievement on new technology of ion implanting of metal material and studies made abroad are described.
简单介绍了典型离子注入机的组成，分析了离子注入机中扫描技术的重要性。
Introduced the configuration of typical ion implanter, analyzed the importance of the implantation mechanical scanning technology.
离子注入后进行了氧化试验，并结合X射线衍射和卢瑟福背散射进行了分析。
X ray diffraction and Rutherford Back Scattering techniques were adopted to investigate and analyze the oxidation characteristics of the films.
基于氢离子注入技术和典型电化学阳极浸蚀法制备了多孔硅有图(PS)薄膜。
Patterned porous silicon (PS) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method.
论述金属离子注入技术在改善材料的疲劳、耐磨性、 氧化等性能方面的应用。
The application of metal ion injection technology for improving metal fatigue resistance and erosion resistance are discussed.
本文用经典力学中推广的朗之万方程研究了离子注入中入射离子与固体的相互作用。
The interactions between incident particles and solids in ion implantation have been investigated based on the generalized Langevin equation of classical dynamics.
结果显示离子注入胚乳不仅对生物的修复系统有较大影响，而且能够诱发后代突变。
It showed that the endosperm implanted by the ions not only affected biological repair system, but also induced the mutation of offspring.
采用等离子体源离子注入方法，将氮离子注入纯铁粉中，对样品进行穆斯堡尔谱研究。
Mssbauer measurements have been carried out for pure iron powder samples, the whose surface was implanted with nitrogen ions by plasma source ion implantation techniques.
在0 ~30v范围内，离子注入PES膜的表面电导率随电压的增加而缓慢增加。
Surface conductivity of ion implanted PES film increase slowly along with the increase of voltage in 0 ~ 30v.
并讨论了表面改性技术如热喷涂、激光、离子注入等非平衡处理技术对陶瓷材料的改性。
And discussed ceramic materials modification by surface modification processes such as thermal spraying, Laser, ion implantation and other non-equilibrium treatments.
本文对离子注入和电子束的抗静电改性机理进行了分析，提出了选择最佳改性工艺条件的原则。
Antistatic modified mechanism of ion implantation and electron beam is reviewed in this paper. The selective principle of optimum modified technological conditions is provided.
本文对离子注入和电子束的抗静电改性机理进行了分析，提出了选择最佳改性工艺条件的原则。
Antistatic modified mechanism of ion implantation and electron beam is reviewed in this paper. The selective principle of optimum modified technological conditions is provided.
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