早期LED的液晶层是砷化镓或者磷化镓做的，所以发出红光。
The crystal layer on early LEDs was gallium arsenide or gallium phosphide, which lent that reddish color.
黄河源彩色设备均采用砷化镓磷化镓磷化物黄色发光二极管。
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
高效率红源彩色设备均采用砷化镓磷化镓磷化物的橙色发光二极管。
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
在温和条件下，利用磷化镓纳米粒子进行了氮的还原反应，即氮氨转化。
Under mild ambient conditions gallium phosphide nanoparticles were employed to carry out the reduction of nitrogen.
通过数值拟合获得了磷化镓在飞秒激光脉冲作用下的非线性折射率和双光子吸收系数。
Nonlinear refractivity and two-photon absorption of GaP are obtained by numerical fitting the experimental results.
按实验记录，发绿光的磷化镓的量子效率高达0.6%，但目前请市售产品效率则低一个数量级还多。
The green emitting GaP has quantum efficiencies as high as 0.6% recorded for laboratory. Present marketed units, however, have much greater than an order of magnitude less efficiency.
按实验记录，发绿光的磷化镓的量子效率高达0。6 %，但目前请市售产品效率则低一个数量级还多。
The green emitting gap has quantum efficiencies as high as 0. 6 % recorded for laboratory. present marketed units, however, have much greater than an order of magnitude less efficiency.
方形光二极管阵列包括四个集成在通用磷化铟（InP）衬底上的光二极管单片集成电路，采用低制造、集成与测试率的铟镓砷化物/磷化铟半导体工艺制造。
The Quad PD Arrays consist of four photodiodes monolithically integrated on a common indium phosphide (InP) substrate, and are fabricated using a low FIT rate InGaAs/InP semiconductor process.
Luxtera的设计消除了使用昂贵的III - V化合物半导体材料(如砷化镓和磷化铟)的必要。
Luxtera's design eliminates the need to use expensive group iii-v compounds, such as gallium arsenide (GaAs) and indium phosphate (InP), in the semiconductors.
Luxtera的设计消除了使用昂贵的III - V化合物半导体材料(如砷化镓和磷化铟)的必要。
Luxtera's design eliminates the need to use expensive group iii-v compounds, such as gallium arsenide (GaAs) and indium phosphate (InP), in the semiconductors.
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